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| 型号： | PC9S08AC128CLKE |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 28/40页 |
| 文件大小： | 0K |
| 描述： | MCU 8BIT 128K FLASH 80-LQFP |
| 标准包装： | 90 |
| 系列： | S08 |
| 核心处理器： | S08 |
| 芯体尺寸： | 8-位 |
| 速度： | 40MHz |
| 连通性： | I²C，LIN，SCI，SPI |
| 外围设备： | LVD，POR，PWM，WDT |
| 输入/输出数： | 69 |
| 程序存储器容量： | 128KB（128K x 8） |
| 程序存储器类型： | 闪存 |
| RAM 容量： | 8K x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 2.7 V ~ 5.5 V |
| 数据转换器： | A/D 16x10b |
| 振荡器型： | 内部 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 80-LQFP |
| 包装： | 托盘 |
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Chapter 3 Electrical Characteristics and Timing Specifications
MC9S08AC128 Series Data Sheet, Rev. 4
34
Freescale Semiconductor
3.13
EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the MCU resides. Board
design and layout, circuit topology choices, location and characteristics of external components as well as MCU software
operation all play a significant role in EMC performance. The system designer should consult Freescale applications notes such
as AN2321, AN1050, AN1263, AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC
performance.
3.13.1
Radiated Emissions
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell method in accordance
with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed with the microcontroller installed on a
custom EMC evaluation board while running specialized EMC test software. The radiated emissions from the microcontroller
are measured in a TEM cell in two package orientations (North and East). For more detailed information concerning the
evaluation results, conditions and setup, please refer to the EMC Evaluation Report for this device.
The maximum radiated RF emissions of the tested configuration in all orientations are less than or equal to the reported
emissions levels.
Table 3-16. Radiated Emissions
Parameter
Symbol
Conditions
Frequency
fOSC/fBUS
Level1
(Max)
1 Data based on laboratory test results.
Unit
Radiated emissions,
electric field and magnetic field
VRE_TEM
VDD = 5.0 V
TA = +25
oC
package type
80 LQFP
0.15 – 50 MHz
32kHz crystal
20MHz Bus
30
dB
V
50 – 150 MHz
32
150 – 500 MHz
19
500 – 1000 MHz
7
IEC Level
I2
2 IEC and SAE Level Maximums: I=36 dBuV.
—
SAE Level
I2
—
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