参数资料
型号: PESD3V3L5UV,115
厂商: NXP Semiconductors
文件页数: 10/17页
文件大小: 0K
描述: DIODE 5FOLD ESD PROTECT SSMINI6
标准包装: 4,000
电压 - 反向隔离(标准值): 3.3V
电压 - 击穿: 5.3V
功率(瓦特): 25W
电极标记: 5 通道阵列 - 单向
安装类型: 表面贴装
封装/外壳: SOT-563,SOT-666
供应商设备封装: SOT-666
包装: 带卷 (TR)
NXP Semiconductors
PESDxL5UF/V/Y
Low capacitance unidirectional ?vefold ESD protection diode arrays
7. Application information
The devices are designed for the protection of up to ?ve unidirectional data or signal lines
from the damage caused by ESD and surge pulses. The devices may be used on lines
where the signal polarities are both, positive and negative with respect to ground. The
devices provide a surge capability of 25 W per line for an 8/20 μ s waveform each.
high-speed data lines
high-speed data lines
DUT
GND
006aab144
Fig 9. Typical application for unidirectional
application of ?ve lines
DUT
GND
006aab145
Fig 10. Typical application for bidirectional application
of four lines
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
PESDXL5UF_V_Y_2
? NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 8 January 2008
10 of 17
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