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参数资料
| 型号： | PESD3V3V4UK,132 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 9/15页 |
| 文件大小： | 0K |
| 描述： | DIODE QUAD ESD PROTECT SOT891 |
| 标准包装： | 5,000 |
| 系列： | * |
NXP Semiconductors
PESDxV4UK series
Very low capacitance unidirectional quadruple ESD protection arrays
7. Application information
The PESDxV4UK series is designed for the protection of up to four unidirectional data or
signal lines from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are either positive or negative with respect to ground.
The PESD3V3V4UK and the PESD5V0V4UK provide a surge capability of 25 W per line
and the PESD9V0V4UK provides a surge capability of 28 W per line for an 8/20 μ s
waveform.
data
lines
PESDxV4UK
PESDxV4UK
1
2
3
6
5 n.c.
4
1
n.c. 2
3
6
5 n.c.
4
unidirectional protection of 4 lines
bidirectional protection of 3 lines
006aac384
Fig 10. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors , and is
suitable for use in automotive applications.
PESDXV4UK_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
? NXP B.V. 2010. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PESD3V3V4UW | 制造商:NXP Semiconductors 功能描述:DIODE TVS 0.3UA 3.3V SOT-665 |
| PESD3V3V4UW T/R | 功能描述:TVS二极管阵列 DIODE ARRAY ESD TAPE-7 RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| PESD3V3V4UW,115 | 功能描述:TVS二极管阵列 DIODE ARRAY ESD RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| PESD3V3X1BCSFYL | 功能描述:TVS DIODE 3.3VWM 6.5VC SOD962 制造商:nexperia usa inc. 系列:- 包装:剪切带（CT） 零件状态:在售 类型:齐纳 双向通道:1 电压 - 反向关态（典型值）:3.3V（最大） 电压 - 击穿（最小值）:6V 电压 - 箝位（最大值）@ Ipp:5.5V 电流 - 峰值脉冲（10/1000μs）:8A（8/20μs） 功率 - 峰值脉冲:- 电源线路保护:无 应用:通用 不同频率时的电容:1.1pF @ 1MHz 工作温度:-40°C ~ 125°C（TA） 安装类型:表面贴装 封装/外壳:0201（0603 公制） 供应商器件封装:DSN0603-2 标准包装:1 |
| PESD3V3X1BL | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Ultra low capacitance bidirectional ESD protection diode |
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