参数资料
型号: PESD5V0S2UQ,115
厂商: NXP Semiconductors
文件页数: 3/13页
文件大小: 0K
描述: DIODE DBL ESD PROTECTION SOT663
产品培训模块: ESD Standards and Products
标准包装: 4,000
电压 - 反向隔离(标准值): 5V
电压 - 击穿: 6.4V
功率(瓦特): 150W
电极标记: 2 通道阵列 - 单向
安装类型: 表面贴装
封装/外壳: SOT-663
供应商设备封装: SOT-663
包装: 带卷 (TR)
NXP Semiconductors
PESDxS2UQ series
Double ESD protection diodes in SOT663 package
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
P PP
peak pulse power
t p = 8/20 μ s
[1][2]
-
150
W
I PP
peak pulse current
t p = 8/20 μ s
[1][2]
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
-
-
-
-
-
15
15
5
5
3
A
A
A
A
A
Per device
T j
T amb
T stg
junction temperature
ambient temperature
storage temperature
-
? 65
? 65
150
+150
+150
° C
° C
° C
[1]
[2]
Non-repetitive current pulse 8/20 μ s exponential decay waveform according to IEC 61000-4-5.
Measured across either pins 1 and 3 or pins 2 and 3.
Table 6. ESD maximum ratings
T amb = 25 ° C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
V ESD
electrostatic discharge
voltage
IEC 61000-4-2
(contact discharge)
[1][2]
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
-
-
-
-
-
30
30
30
30
23
kV
kV
kV
kV
kV
PESDxS2UQ series
MIL-STD-883
-
10
kV
(human body model)
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured across either pins 1 and 3 or pins 2 and 3.
Table 7.
Standard
Per diode
ESD standards compliance
Conditions
PESDXS2UQ_SER_4
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
> 15 kV (air); > 8 kV (contact)
> 4 kV
? NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 26 January 2010
3 of 13
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