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参数资料
| 型号： | PHD11N06LT |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor Logic level FET(N沟道TrenchMOS 晶体管逻辑电平场效应管) |
| 中文描述： | 10.3 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | PLASTIC, DPAK-3 |
| 文件页数： | 10/12页 |
| 文件大小： | 112K |
| 代理商： | PHD11N06LT |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
Logic level FET
PHP11N06LT, PHB11N06LT
PHD11N06LT
MECHANICAL DATA
Fig.19. SOT428 surface mounting package. Centre pin connected to mounting base.
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT428
98-04-07
0
10
20 mm
scale
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
E
b2
D1
w
A
M
b
c
b1
L1
L
1
3
2
D
E1
HE
L2
Note
1. Measured from heatsink back to lead.
e1
e
A
A2
A
A1
y
seating plane
mounting
base
A1
(1)
D
max.
b
D1
max.
E
max.
HE
max.
w
y
max.
A2
b2
b1
max.
c
E1
e
e1
L1
min.
L2
L
A
max.
UNIT
DIMENSIONS (mm are the original dimensions)
0.2
0.2
mm
2.38
2.22
0.65
0.45
0.89
0.71
0.89
0.71
1.1
0.9
5.36
5.26
0.4
0.2
6.22
5.98
4.81
4.45
2.285
4.57
10.4
9.6
0.5
0.7
0.5
6.73
6.47
4.0
2.95
2.55
August 1999
10
Rev 1.000
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| PHP125N06L | TrenchMOS transistor Logic level FET(TrenchMOS 晶体管标准电平场效应管) |
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