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参数资料
| 型号： | PHD11N06LT |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor Logic level FET(N沟道TrenchMOS 晶体管逻辑电平场效应管) |
| 中文描述： | 10.3 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | PLASTIC, DPAK-3 |
| 文件页数： | 7/12页 |
| 文件大小： | 112K |
| 代理商： | PHD11N06LT |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
Logic level FET
PHP11N06LT, PHB11N06LT
PHD11N06LT
MECHANICAL DATA
Fig.16. SOT78 (TO220AB); pin 2 connected to mounting base (Net mass:2g)
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to mounting instructions for SOT78 (TO220AB) package.
3. Epoxy meets UL94 V0 at 1/8".
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT78
TO-220
D
D1
q
P
L
1
2
3
L2
(1)
b1
e
e
b
0
5
10 mm
scale
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220
SOT78
DIMENSIONS (mm are the original dimensions)
A
E
A1
c
Note
1. Terminals in this zone are not tinned.
Q
L1
UNIT
A1
b1
D1
e
P
mm
2.54
q
Q
A
b
D
c
L2
(1)
3.0
3.8
3.6
15.0
13.5
3.30
2.79
3.0
2.7
2.6
2.2
0.7
0.4
15.8
15.2
0.9
0.7
1.3
1.0
4.5
4.1
1.39
1.27
6.4
5.9
10.3
9.7
L1
E
L
97-06-11
August 1999
7
Rev 1.000
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