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参数资料
| 型号： | PHP109 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | P-channel enhancement mode MOS transistor(P沟道增强型MOS晶体管) |
| 中文描述： | 5 A, 30 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封装： | PLASTIC, SO-8 |
| 文件页数： | 5/12页 |
| 文件大小： | 101K |
| 代理商： | PHP109 |
1997 Jun 18
5
Philips Semiconductors
Product specification
P-channel enhancement mode
MOS transistor
PHP109
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
30
1
TYP.
825
350
150
30
MAX.
2.8
100
±
100
0.15
0.09
40
UNIT
V
(BR)DSS
V
GSth
I
DSS
I
GSS
R
DSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
V
GS
= 0; I
D
=
10
μ
A
V
GS
= V
DS
; I
D
=
1 mA
V
GS
= 0; V
DS
=
24 V
V
GS
=
±
20 V; V
DS
= 0
V
GS
=
4.5 V; I
D
=
1.25 A
V
GS
=
10 V; I
D
=
2.5 A
V
GS
= 0; V
DS
=
24 V; f = 1 MHz
V
GS
= 0; V
DS
=
24 V; f = 1 MHz
V
GS
= 0; V
DS
=
24 V; f = 1 MHz
V
GS
=
10 V; V
DD
=
15 V;
I
D
=
2.5 A
V
GS
=
10 V; V
DD
=
15 V;
I
D
=
2.5 A
V
GS
=
10 V; V
DD
=
15 V;
I
D
=
2.5 A
V
V
nA
nA
pF
pF
pF
nC
C
iss
C
oss
C
rss
Q
G
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
Q
GS
gate-source charge
3
nC
Q
GD
gate-drain charge
12
nC
Switching times
(see Fig.11)
t
d(on)
t
f
t
on
t
d(off)
t
r
t
off
turn-on delay time
fall time
turn-on switching time
turn-off delay time
rise time
turn-off switching time
V
GS
= 0 to
10 V; V
DD
=
15 V;
I
D
=
1 A; R
L
= 15
; R
gen
= 6
7
10
17
60
40
100
35
200
ns
ns
ns
ns
ns
ns
V
GS
=
10 to 0 V; V
DD
=
15 V;
I
D
=
1 A; R
L
= 15
; R
gen
= 6
Source-drain diode
V
SD
t
rr
source-drain forward voltage
reverse recovery time
V
GD
= 0; I
S
=
1.25 A
I
S
=
1.25 A; di/dt = 100 A/
μ
s
70
1.3
V
ns
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