- 您现在的位置：买卖IC网 > PDF目录11631 > PIC16F526T-I/SL (Microchip Technology)IC PIC MCU FLASH 1KX12 14SOIC PDF资料下载
参数资料
| 型号： | PIC16F526T-I/SL |
| 厂商： | Microchip Technology |
| 文件页数： | 114/122页 |
| 文件大小： | 0K |
| 描述： | IC PIC MCU FLASH 1KX12 14SOIC |
| 标准包装： | 2,600 |
| 系列： | PIC® 16F |
| 核心处理器： | PIC |
| 芯体尺寸： | 8-位 |
| 速度： | 20MHz |
| 外围设备： | POR，WDT |
| 输入/输出数： | 11 |
| 程序存储器容量： | 1.5KB（1K x 12） |
| 程序存储器类型： | 闪存 |
| RAM 容量： | 67 x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 2 V ~ 5.5 V |
| 数据转换器： | A/D 3x8b |
| 振荡器型： | 内部 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
| 配用： | ICE2000-ND - EMULATOR MPLAB-ICE 2000 POD |
| 其它名称： | PIC16F526T-I/SLTR |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页第88页第89页第90页第91页第92页第93页第94页第95页第96页第97页第98页第99页第100页第101页第102页第103页第104页第105页第106页第107页第108页第109页第110页第111页第112页第113页当前第114页第115页第116页第117页第118页第119页第120页第121页第122页
2009 Microchip Technology Inc.
DS39689F-page 91
PIC18F2221/2321/4221/4321 FAMILY
8.2
Reading the Data EEPROM
Memory
To read a data memory location, the user must write the
address to the EEADR register, clear the EEPGD
control bit (EECON1<7>) and then set control bit, RD
(EECON1<0>). The data is available on the very next
instruction cycle; therefore, the EEDATA register can
be read by the next instruction. EEDATA will hold this
value until another read operation, or until it is written to
by the user (during a write operation).
The basic process is shown in Example 8-1.
8.3
Writing to the Data EEPROM
Memory
To write an EEPROM data location, the address must
first be written to the EEADR register and the data
written to the EEDATA register. The sequence in
Example 8-2 must be followed to initiate the write cycle.
The write will not begin if this sequence is not exactly
followed (write 55h to EECON2, write 0AAh to
EECON2, then set WR bit) for each byte. It is strongly
recommended that interrupts be disabled during this
code segment.
Additionally, the WREN bit in EECON1 must be set to
enable writes. This mechanism prevents accidental
writes to data EEPROM due to unexpected code
execution (i.e., runaway programs). The WREN bit
should be kept clear at all times, except when updating
the EEPROM. The WREN bit is not cleared by
hardware.
After a write sequence has been initiated, EECON1,
EEADR and EEDATA cannot be modified. The WR bit
will be inhibited from being set unless the WREN bit is
set. The WREN bit must be set on a previous instruc-
tion. Both WR and WREN cannot be set with the same
instruction.
At the completion of the write cycle, the WR bit is
cleared in hardware and the EEPROM Interrupt Flag
bit, EEIF, is set. The user may either enable this
interrupt, or poll this bit. EEIF must be cleared by
software.
8.4
Write Verify
Depending on the application, good programming
practice may dictate that the value written to the mem-
ory should be verified against the original value. This
should be used in applications where excessive writes
can stress bits near the specification limit.
EXAMPLE 8-1:
DATA EEPROM READ
EXAMPLE 8-2:
DATA EEPROM WRITE
MOVLW
DATA_EE_ADDR
;
MOVWF
EEADR
; Data Memory Address to read
BCF
EECON1, EEPGD
; Point to DATA memory
BCF
EECON1, CFGS
; Access EEPROM
BSF
EECON1, RD
; EEPROM Read
MOVF
EEDATA, W
; W = EEDATA
MOVLW
DATA_EE_ADDR
;
MOVWF
EEADR
; Data Memory Address to write
MOVLW
DATA_EE_DATA
;
MOVWF
EEDATA
; Data Memory Value to write
BCF
EECON1, EEPGD
; Point to DATA memory
BCF
EECON1, CFGS
; Access EEPROM
BSF
EECON1, WREN
; Enable writes
BCF
INTCON, GIE
; Disable Interrupts
MOVLW
55h
;
Required
MOVWF
EECON2
; Write 55h
Sequence
MOVLW
0AAh
;
MOVWF
EECON2
; Write 0AAh
BSF
EECON1, WR
; Set WR bit to begin write
BTFSC
EECON1, WR
; Wait for write to complete
GOTO
$-2
BSF
INTCON, GIE
; Enable Interrupts
; User code execution
BCF
EECON1, WREN
; Disable writes on write complete (EEIF set)
相关PDF资料 |
PDF描述 |
|---|---|
| PIC12F510T-I/MC | IC PIC MCU FLASH 1024X12 8DFN |
| PIC12F510-E/MS | IC PIC MCU FLASH 1.5KB 8MSOP |
| D38999/26WJ19PC | CONN PLUG 19POS STRAIGHT W/PINS |
| PIC10F206-I/MC | IC PIC MCU FLASH 512X12 8DFN |
| D38999/26WJ19PB | CONN PLUG 19POS STRAIGHT W/PINS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PIC16F527-E/ML | 制造商:Microchip Technology Inc 功能描述:IC MCU 8BIT 1.5KB FLASH 20QFN |
| PIC16F527-E/P | 制造商:Microchip Technology 功能描述:MCU 8-bit PIC16 PIC RISC 1.5KB Flash 2.5V/3.3V/5V 20-Pin PDIP Tube 制造商:Microchip Technology Inc 功能描述:1.5KB FLASH PROGRAM, 64B FLASH DATA, 8MHZ INTERNAL OSCILLATO - Rail/Tube 制造商:Microchip Technology Inc 功能描述:IC MCU 8BIT 1.5KB FLASH 20PDIP 制造商:Microchip Technology Inc 功能描述:8-bit Microcontrollers - MCU 8MHz Oscillator, 8b ADC 2x Comp, 2x Amps |
| PIC16F527-E/SO | 制造商:Microchip Technology Inc 功能描述:1.5KB FLASH PROGRAM, 64B FLASH DATA, 8MHZ INTERNAL OSCILLATO - Rail/Tube 制造商:Microchip Technology Inc 功能描述:IC MCU 8BIT 1.5KB FLASH 20SOIC |
| PIC16F527-I/ML | 功能描述:8位微控制器 -MCU 8MHz Oscillator, 8b ADC 2x Comp, 2x Amps RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| PIC16F527-I/P | 功能描述:8位微控制器 -MCU 8MHz Oscillator, 8b ADC 2x Comp, 2x Amps RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
发布紧急采购，3分钟左右您将得到回复。