参数资料
| 型号： | PIC18LF4331T-I/ML |
| 厂商： | Microchip Technology |
| 文件页数： | 39/119页 |
| 文件大小： | 0K |
| 描述： | IC MCU FLASH 4KX16 44QFN |
| 标准包装： | 1,600 |
| 系列： | PIC® 18F |
| 核心处理器： | PIC |
| 芯体尺寸： | 8-位 |
| 速度： | 40MHz |
| 连通性： | I²C，SPI，UART/USART |
| 外围设备： | 欠压检测/复位，LVD，电源控制 PWM，QEI，POR，PWM，WDT |
| 输入/输出数： | 36 |
| 程序存储器容量： | 8KB（4K x 16） |
| 程序存储器类型： | 闪存 |
| EEPROM 大小： | 256 x 8 |
| RAM 容量： | 768 x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 2 V ~ 5.5 V |
| 数据转换器： | A/D 9x10b |
| 振荡器型： | 内部 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 44-VQFN 裸露焊盘 |
| 包装： | 带卷 (TR) |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页当前第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页第88页第89页第90页第91页第92页第93页第94页第95页第96页第97页第98页第99页第100页第101页第102页第103页第104页第105页第106页第107页第108页第109页第110页第111页第112页第113页第114页第115页第116页第117页第118页第119页
PIC18F2331/2431/4331/4431
DS39616D-page 26
2010 Microchip Technology Inc.
2.2
Power Supply Pins
2.2.1
DECOUPLING CAPACITORS
The use of decoupling capacitors on every pair of
power supply pins, such as VDD, VSS, AVDD and
AVSS, is required.
Consider the following criteria when using decoupling
capacitors:
Value and type of capacitor: A 0.1
F (100 nF),
10-20V capacitor is recommended. The capacitor
should be a low-ESR device, with a resonance
frequency in the range of 200 MHz and higher.
Ceramic capacitors are recommended.
Placement on the printed circuit board: The
decoupling capacitors should be placed as close
to the pins as possible. It is recommended to
place the capacitors on the same side of the
board as the device. If space is constricted, the
capacitor can be placed on another layer on the
PCB using a via; however, ensure that the trace
length from the pin to the capacitor is no greater
than 0.25 inch (6 mm).
Handling high-frequency noise: If the board is
experiencing high-frequency noise (upward of
tens of MHz), add a second ceramic type capaci-
tor in parallel to the above described decoupling
capacitor. The value of the second capacitor can
be in the range of 0.01
F to 0.001 F. Place this
second capacitor next to each primary decoupling
capacitor. In high-speed circuit designs, consider
implementing a decade pair of capacitances as
close to the power and ground pins as possible
(e.g., 0.1
F in parallel with 0.001 F).
Maximizing performance: On the board layout
from the power supply circuit, run the power and
return traces to the decoupling capacitors first,
and then to the device pins. This ensures that the
decoupling capacitors are first in the power chain.
Equally important is to keep the trace length
between the capacitor and the power pins to a
minimum, thereby reducing PCB trace
inductance.
2.2.2
TANK CAPACITORS
On boards with power traces running longer than
six inches in length, it is suggested to use a tank capac-
itor for integrated circuits, including microcontrollers, to
supply a local power source. The value of the tank
capacitor should be determined based on the trace
resistance that connects the power supply source to
the device, and the maximum current drawn by the
device in the application. In other words, select the tank
capacitor so that it meets the acceptable voltage sag at
the device. Typical values range from 4.7
F to 47 F.
2.2.3
CONSIDERATIONS WHEN USING
BOR
When the Brown-out Reset (BOR) feature is enabled,
a sudden change in VDD may result in a spontaneous
BOR event. This can happen when the microcontroller
is operating under normal operating conditions, regard-
less of what the BOR set point has been programmed
to, and even if VDD does not approach the set point.
The precipitating factor in these BOR events is a rise or
fall in VDD with a slew rate faster than 0.15V/
s.
An application that incorporates adequate decoupling
between the power supplies will not experience such
rapid voltage changes. Additionally, the use of an
electrolytic tank capacitor across VDD and VSS, as
described above, will be helpful in preventing high slew
rate transitions.
If the application has components that turn on or off,
and share the same VDD circuit as the microcontroller,
the BOR can be disabled in software by using the
SBOREN bit before switching the component. After-
wards, allow a small delay before re-enabling the BOR.
By doing this, it is ensured that the BOR is disabled
during the interval that might cause high slew rate
changes of VDD.
Note:
Not all devices incorporate software BOR
control. See Section 5.0 “Reset” for
device-specific information.
相关PDF资料 |
PDF描述 |
|---|---|
| PIC16C56A-04I/SO | IC MCU OTP 1KX12 18SOIC |
| PIC18F4515T-I/ML | IC MCU FLASH 24KX16 44QFN |
| PIC18F4515-E/PT | IC MCU FLASH 24KX16 44TQFP |
| PIC18F4515-E/ML | IC MCU FLASH 24KX16 44QFN |
| PIC18LF2610T-I/SO | IC MCU FLASH 32KX16 28SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PIC18LF43K22-E/ML | 功能描述:8位微控制器 -MCU 8KB Flash 3968b RAM SERIAL EE IND RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| PIC18LF43K22-E/MV | 功能描述:8位微控制器 -MCU 8KB FL 512b RAM 8bit familynanoWatt XLP RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| PIC18LF43K22-E/P | 功能描述:8位微控制器 -MCU 8KB Flash 3968b RAM SERIAL EE IND RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| PIC18LF43K22-E/PT | 功能描述:8位微控制器 -MCU 8KB Flash 3968b RAM SERIAL EE IND RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| PIC18LF43K22-I/ML | 功能描述:8位微控制器 -MCU 8KB Flash 3968b RAM SERIAL EE IND RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
发布紧急采购，3分钟左右您将得到回复。