参数资料
型号: PPC5606BCLU64
厂商: Freescale Semiconductor
文件页数: 71/112页
文件大小: 0K
描述: MCU 32BIT 1M 64MHZ
标准包装: 40
系列: MPC56xx Qorivva
核心处理器: e200z0h
芯体尺寸: 32-位
速度: 64MHz
连通性: CAN,I²C,LIN,SCI,SPI
外围设备: POR,PWM,WDT
输入/输出数: 149
程序存储器容量: 1MB(1M x 8)
程序存储器类型: 闪存
EEPROM 大小: 4K x 16
RAM 容量: 80K x 8
电压 - 电源 (Vcc/Vdd): 3 V ~ 3.6 V
数据转换器: A/D 29x10b,5x12b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 176-LQFP
包装: 托盘
Electrical characteristics
MPC5607B Microcontroller Data Sheet, Rev. 7
Freescale Semiconductor
61
4.10
Flash memory electrical characteristics
4.10.1
Program/erase characteristics
Table 28 shows the program and erase characteristics.
Table 28. Program and erase specifications
Symbol
C
Parameter
Conditions
Value
Unit
Min Typ1
1 Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to
change pending device characterization.
Initial
max2
2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.
Max3
3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum
values are characterized but not guaranteed.
tdwprogram
CC C Double word (64 bits) program time4
4 Actual hardware programming times. This does not include software overhead.
Code Flash
—
18
50
500
s
Data Flash
22
t16Kpperase
16 KB block preprogram and erase time
Code Flash
—
200
500
5000
ms
Data Flash
300
t32Kpperase
32 KB block preprogram and erase time
Code Flash
—
300
600
5000
ms
Data Flash
400
t128Kpperase
128 KB block preprogram and erase time
Code Flash
—
600
1300
7500
ms
Data Flash
800
tesus
D Erase Suspend Latency
—
30
s
tESRT
C Erase Suspend Request Rate5
5 Time between erase suspend resume and the next erase suspend request
Code Flash
20
—
ms
Data Flash
10
—
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