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参数资料
| 型号： | PZT2222A |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | NPN General Purpose Amplifier |
| 中文描述： | 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261AA |
| 封装： | SOT-223, 4 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 113K |
| 代理商： | PZT2222A |
Electrical Characteristics
TA = 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CEX
Collector Cutoff Current
I
CBO
Collector Cutoff Current
ON CHARACTERISTICS
h
FE
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
C
obo
Output Capacitance
C
ibo
Input Capacitance
rb
’
C
C
Collector Base Time Constant
NF
Noise Figure
(except MMPQ2222 and NMT2222)
I
C
= 20 mA, V
CE
= 20 V, f = 100 MHz
V
CB
= 10 V, I
E
= 0, f = 100 kHz
V
EB
= 0.5 V, I
C
= 0, f = 100 kHz
I
C
= 20 mA, V
CB
= 20 V, f = 31.8 MHz
I
C
= 100
μ
A, V
CE
= 10 V,
R
S
= 1.0 k
, f = 1.0 kHz
I
C
= 20 mA, V
CE
= 20 V, f = 300 MHz
300
MHz
pF
pF
pS
dB
8.0
25
150
4.0
Re(h
ie
)
Real Part of Common-Emitter
High Frequency Input Impedance
60
SWITCHING CHARACTERISTICS
t
d
Delay Time
t
r
Rise Time
t
s
Storage Time
t
f
Fall Time
(except MMPQ2222 and NMT2222)
V
CC
= 30 V, V
BE(OFF)
= 0.5 V,
I
C
= 150 mA, I
B1
= 15 mA
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= I
B2
= 15 mA
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Spice Model
I
C
= 10 mA, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 60 V, V
EB(OFF)
= 3.0 V
V
CB
= 60 V, I
E
= 0
V
CB
= 60 V, I
E
= 0, T
A
= 150
°
C
V
EB
= 3.0 V, I
C
= 0
V
CE
= 60 V, V
EB(OFF)
= 3.0 V
40
75
6.0
V
V
V
nA
μ
A
μ
A
nA
nA
10
0.01
10
10
20
I
EBO
I
BL
Emitter Cutoff Current
Base Cutoff Current
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V, T
A
= -55
°
C
I
C
= 150 mA, V
CE
= 10 V*
I
C
= 150 mA, V
CE
= 1.0 V*
I
C
= 500 mA, V
CE
= 10 V*
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
35
50
75
35
100
50
40
300
V
CE(
sat
)
Collector-Emitter Saturation
Voltage*
Base-Emitter Saturation Voltage*
0.3
1.0
1.2
2.0
V
V
V
V
V
BE(
sat
)
0.6
10
25
225
60
ns
ns
ns
ns
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6
Vtf=1.7 Xtf=3 Rb=10)
NPN General Purpose Amplifier
(continued)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PZT2222A /T3 | 功能描述:两极晶体管 - BJT TRANS SW TAPE-13 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| PZT2222A T/R | 功能描述:两极晶体管 - BJT TRANS SW TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| PZT2222A,115 | 功能描述:两极晶体管 - BJT TRANS SW TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| PZT2222A,135 | 功能描述:两极晶体管 - BJT TRANS SW TAPE-13 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| PZT2222A | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR NPN SOT-223 |
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