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参数资料
| 型号： | PZTA06 |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | NPN General Purpose Amplifier |
| 中文描述： | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SOT-223, 4 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 146K |
| 代理商： | PZTA06 |
M
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Sustaining Voltage*
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CEO
Collector-Cutoff Current
I
CBO
Collector-Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 1.0 mA, I
B
= 0
I
E
= 100
μ
A, I
C
= 0
V
CE
= 60 V, I
B
= 0
V
CB
= 80 V, I
E
= 0
80
4.0
V
V
μ
A
μ
A
0.1
0.1
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
I
C
= 100 mA, I
B
= 10 mA
I
C
= 100 mA, V
CE
= 1.0 V
100
100
V
CE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.25
1.2
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Spice Model
NPN (Is=8.324f Xti=3 Eg=1.11 Vaf=100 Bf=12.16K Ne=1.368 Ise=73.27f Ikf=.1096 Xtb=1.5 Br=11.1 Nc=2 Isc=0
Ikr=0 Rc=.25 Cjc=18.36p Mjc=.3843 Vjc=.75 Fc=.5 Cje=55.61p Mje=.3834 Vje=.75 Tr=72.15n Tf=516.1p Itf=.5
Vtf=4 Xtf=6 Rb=10)
Typical Characteristics
I
C
= 10 mA, V
CE
= 2.0 V,
f = 100 MHz
100
MHz
Collector-Emitter Saturation
Voltage vs Collector Current
P 33
0.1
1
10
100
1000
0
0.1
0.2
0.3
0.4
0.5
I - COLLECTOR CURRENT (mA)
V
C
β
= 10
- 40 oC
25 °C
125 °C
NPN General Purpose Amplifier
(continued)
Typical Pulsed Current Gain
vs Collector Current
P 33
0.001
0.01
0.1
50
100
150
200
I - COLLECTOR CURRENT (A)
h
F
- 40 oC
25 °C
V = 1V
125 °C
相关PDF资料 |
PDF描述 |
|---|---|
| PZTA06 | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT00; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle |
| PZTA27 | Circular Connector; Body Material:Aluminum; Series:PT00; Number of Contacts:3; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket |
| PZTA28 | Circular Connector; No. of Contacts:8; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:12-8 |
| PZTA29 | Applications requiring extremely high current gain at collector currents to 500mA |
| 204-10USOC | 3.0mm Round Type LED Lamps |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PZTA06_Q | 功能描述:两极晶体管 - BJT NPN General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| PZTA06-CUT TAPE | 制造商:FAIRCHILD 功能描述:PZTA06 Series 80 V CE Breakdown .5 A NPN General Purpose Amplifier - SOT-223 |
| PZTA06T/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | SOT-223 |
| PZTA13 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:NPN Silicon Darlington Transistors |
| PZTA14 | 功能描述:达林顿晶体管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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