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参数资料
| 型号： | QEB363.GR |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 红外LED |
| 英文描述： | 2 mm, 1 ELEMENT, INFRARED LED, 940 nm |
| 文件页数： | 1/5页 |
| 文件大小： | 497K |
| 代理商： | QEB363.GR |
PACKAGE DIMENSIONS
SCHEMATIC
9/8/04
Page 1 of 5
2002 Fairchild Semiconductor Corporation
QEB363
SUBMINIATURE PLASTIC
INFRARED EMITTING DIODE
FEATURES
T-3/4 (2mm) Surface Mount Package
Tape & Reel Option (See Tape & Reel Specications)
Lead Form Options: Gullwing, Yoke, Z-Bend
Narrow Emission Angle, 24°
Wavelength = 940 nm, GaAs
Clear water Lens
Matched Photosensor: QSB363
High Radiant Intensity
0.074 (1.9)
0.008 (0.21)
0.004 (0.11)
0.106 (2.7)
0.091 (2.3)
0.055 (1.4)
0.024 (0.6)
0.016 (0.4)
0.087 (2.2)
0.071 (1.8)
0.019 (0.5)
0.012 (0.3)
0.276 (7.0)
MIN
0.024 (0.6)
.059 (1.5)
.051 (1.3)
.118 (3.0)
.102 (2.6)
CATHODE
ANODE
CATHODE
NOTES:
1. Dimensions are in inches (mm).
2. Tolerance of ± .010 (.25) on all non nominal dimensions unless
otherwise specied.
相关PDF资料 |
PDF描述 |
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| QEB363ZR | 1.9 mm, 1 ELEMENT, INFRARED LED, 940 nm |
| QEB373.GR | 1.9 mm, 1 ELEMENT, INFRARED LED, 880 nm |
| QSB363.ZR | PHOTO TRANSISTOR DETECTOR |
| QEC122C4R0 | 3 mm, 1 ELEMENT, INFRARED LED, 880 nm |
| QEC122C4A0 | 3 mm, 1 ELEMENT, INFRARED LED, 880 nm |
相关代理商/技术参数 |
参数描述 |
|---|---|
| QEB363YR | 功能描述:红外发射源 Subminiature LED Plastic RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| QEB363ZR | 功能描述:红外发射源 Subminiature LED Plastic RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| QEB373 | 功能描述:红外发射源 T3-4 ALGAAS LED RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| QEB373.ZR | 制造商:Fairchild Semiconductor Corporation 功能描述:TAPE REEL / T3-4 ALGAAS LED Z BEND T-R |
| QEB373_06 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Subminiature Plastic Infrared Emitting Diode |
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