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参数资料
| 型号： | QEB363.GR |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 红外LED |
| 英文描述： | 2 mm, 1 ELEMENT, INFRARED LED, 940 nm |
| 文件页数： | 5/5页 |
| 文件大小： | 497K |
| 代理商： | QEB363.GR |
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
9/8/04
Page 5 of 5
2002 Fairchild Semiconductor Corporation
QEB363
SUBMINIATURE PLASTIC
INFRARED EMITTING DIODE
相关PDF资料 |
PDF描述 |
|---|---|
| QEB363ZR | 1.9 mm, 1 ELEMENT, INFRARED LED, 940 nm |
| QEB373.GR | 1.9 mm, 1 ELEMENT, INFRARED LED, 880 nm |
| QSB363.ZR | PHOTO TRANSISTOR DETECTOR |
| QEC122C4R0 | 3 mm, 1 ELEMENT, INFRARED LED, 880 nm |
| QEC122C4A0 | 3 mm, 1 ELEMENT, INFRARED LED, 880 nm |
相关代理商/技术参数 |
参数描述 |
|---|---|
| QEB363YR | 功能描述:红外发射源 Subminiature LED Plastic RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| QEB363ZR | 功能描述:红外发射源 Subminiature LED Plastic RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| QEB373 | 功能描述:红外发射源 T3-4 ALGAAS LED RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| QEB373.ZR | 制造商:Fairchild Semiconductor Corporation 功能描述:TAPE REEL / T3-4 ALGAAS LED Z BEND T-R |
| QEB373_06 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Subminiature Plastic Infrared Emitting Diode |
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