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参数资料
| 型号： | QEB363.GR |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 红外LED |
| 英文描述： | 2 mm, 1 ELEMENT, INFRARED LED, 940 nm |
| 文件页数： | 3/5页 |
| 文件大小： | 497K |
| 代理商： | QEB363.GR |
9/8/04
Page 3 of 5
2002 Fairchild Semiconductor Corporation
QEB363
SUBMINIATURE PLASTIC
INFRARED EMITTING DIODE
TYPICAL PERFORMANCE CURVES
200
980
500
200
100
20
2
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
50
10
5
960
940
920
900
20
10
5
2
1
0.1
-25
0
25
50
75
100
0.2
0.5
-25
0
010
10
20
30
40
0.6
0.4
0.2
0
0.2
0.4
0.6
50
60
70
80
90
40
50
60
70
80
90
25
50
75
100
80
60
40
20
0
880 900 920 940 960 980 1000 1020 1040
160
120
80
40
0
-25
0
25
50
75
85
100
Ambient Temperature TA (C)
Fig. 1 Maximum Forward Current vs.
Temperature
Fig. 3 Peak Emission Wavelength vs.
Ambient Temperature
Fig. 4 Forward Current vs.
Forward Voltage
Fig. 2 Relative Radiant Intensity vs.
Wavelength
Fig. 5 Relative Radiant Flux vs.
Ambient Temperature
Fig. 6 Relative Radiant Intensity vs.
Angular Displacement
Forwar
d
Current
I
F
(mA)
Ambient Temperature TA (C)
P
eak
Emission
W
a
velength
(nm)
Ambient Temperature TA (C)
Relative
Radiant
Flux
(%)
Ambient Temperature TA (C)
Relative
Radiant
Intensity
Forward Voltage VF (V)
Forwar
d
Current
I
F
(mA)
Wavelength
λ (nm)
Relative
Radiant
Intensity
(%)
IF = 20 mA
TA = 25C
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| QEB363ZR | 1.9 mm, 1 ELEMENT, INFRARED LED, 940 nm |
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| QSB363.ZR | PHOTO TRANSISTOR DETECTOR |
| QEC122C4R0 | 3 mm, 1 ELEMENT, INFRARED LED, 880 nm |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| QEB363YR | 功能描述:红外发射源 Subminiature LED Plastic RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| QEB363ZR | 功能描述:红外发射源 Subminiature LED Plastic RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| QEB373 | 功能描述:红外发射源 T3-4 ALGAAS LED RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| QEB373.ZR | 制造商:Fairchild Semiconductor Corporation 功能描述:TAPE REEL / T3-4 ALGAAS LED Z BEND T-R |
| QEB373_06 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Subminiature Plastic Infrared Emitting Diode |
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