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参数资料
| 型号： | QEB363 |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | LED IR EMITTING 940NM SMD 2MM |
| 标准包装： | 1,000 |
| 电流 - DC 正向(If)： | 100mA |
| 辐射强度(le)最小值@正向电流： | 8mW/sr @ 100ma |
| 波长： | 940nm |
| 正向电压： | 1.6V |
| 视角： | 24° |
| 方向： | 顶视图 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 2-SMD，扁平引线 |
| 包装： | 散装 |
Absolute Maximum Ratings (T A = 25°C unless otherwise specified)
Symbol
T OPR
T STG
Parameter
Operating Temperature
Storage Temperature
Rating
-40 to +100
-40 to +100
Unit
°C
°C
T SOL-I
Soldering Temperature
(Iron) (2,3,4)
240 for 5 sec
°C
T SOL-F
I F
V R
Soldering Temperature (Flow) (2,3)
Continuous Forward Current
Reverse Voltage
260 for 10 sec
50
5
°C
mA
V
P D
Power
Dissipation (1)
100
mW
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical/Optical Characteristics (T A = 25°C)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
λ P
Θ
V F
I R
I e
t r
t f
Peak Emission Wavelength
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity
Rise Time
Fall Time
I F = 100mA
I F = 100mA
I F = 100mA, t p = 20ms
V R = 5V
I F = 100mA, tp = 20ms
I F = 100mA
t p = 20ms
8
940
±12
1
1
1.6
100
nm
°
V
μA
mW/sr
μs
μs
?2002 Fairchild Semiconductor Corporation
QEB363 Rev. 1.0.0
2
www.fairchildsemi.com
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相关代理商/技术参数 |
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|---|---|
| QEB363 | 制造商:Fairchild Semiconductor Corporation 功能描述:LED LAMP ROHS COMPLIANT:NO |
| QEB363_06 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Subminiature Plastic Infrared Emitting Diode |
| QEB363GR | 功能描述:红外发射源 Subminiature LED Plastic RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| QEB363YR | 功能描述:红外发射源 Subminiature LED Plastic RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| QEB363ZR | 功能描述:红外发射源 Subminiature LED Plastic RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
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