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参数资料
| 型号： | QRE1113GR |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | SENSOR OPTO TRANS REFL SMD PHOTO |
| 产品目录绘图： | QRE1113 Series QRE Series Schematic |
| 标准包装： | 1 |
| 检测距离： | 0.197"（5mm） |
| 检测方法： | 反射 |
| 电压 - 集电极发射极击穿（最大）： | 30V |
| 电流 - 集电极 (Ic)（最大）： | 20mA |
| 电流 - DC 正向(If)： | 50mA |
| 输出类型： | 光电晶体管 |
| 响应时间： | 20µs，20µs |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 4-SMD |
| 包装： | 标准包装 |
| 工作温度： | -40°C ~ 85°C |
| 产品目录页面： | 2777 (CN2011-ZH PDF) |
| 其它名称： | QRE1113GRDKR |
Absolute Maximum Ratings (T A = 25°C unless otherwise speci?ed)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
T OPR
T STG
T SOL-I
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron) (2,3,4)
Rating
-40 to +85
-40 to +90
240 for 5 sec
Units
°C
°C
°C
T SOL-F
Soldering Temperature
(Flow) (2,3)
260 for 10 sec
°C
EMITTER
I F
V R
Continuous Forward Current
Reverse Voltage
50
5
mA
V
I FP
Peak Forward
Current (5)
1
A
P D
Power
Dissipation (1)
75
mW
SENSOR
V CEO
V ECO
I C
P D
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Power Dissipation (1)
30
5
20
50
V
V
mA
mW
Electrical/Optical Characteristics (T A = 25°C unless otherwise speci?ed)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
INPUT DIODE
V F
Forward Voltage
I F = 20mA
1.2
1.6
V
I R
λ PE
Reverse Leakage Current
Peak Emission Wavelength
V R = 5V
I F = 20mA
940
10
μA
nm
OUTPUT TRANSISTOR
I D
Collector-Emitter Dark Current
I F = 0mA, V CE = 20V
100
nA
COUPLED
I C(ON)
On-State Collector Current
I F = 20mA, V CE = 5V (6)
0.10
0.40
mA
I CX
V CE (SAT)
Cross-Talk Collector Current
Saturation Voltage
I F = 20mA, V CE =
5V (7)
1
0.3
μA
V
t r
t f
Rise Time
Fall Time
V CC = 5V, I C(ON) = 100μA,
R L = 1k ?
20
20
μs
Notes:
1. Derate power dissipation linearly 1.00mW/°C above 25°C.
2. RMA ?ux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) from housing.
5. Pulse conditions: tp = 100μs; T = 10ms.
6. Measured using an aluminum alloy mirror at d = 1mm.
7. No re?ective surface at close proximity.
?2011 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.7.1
3
www.fairchildsemi.com
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相关代理商/技术参数 |
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| QRE1113GR | 制造商:Fairchild Semiconductor Corporation 功能描述:Reflective Object Sensor |
| QRE1113GR_Q | 功能描述:光学开关（反射型，光电晶体管输出） Reflective Sensor RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel |
| QRE1113GR-CUT TAPE | 制造商:FAIRCHILD 功能描述:QRE1113 Series 30 V 50 mA Miniature Reflective Object Sensor - SMD-4 |
| QRE1230R30 | 制造商:POWEREX 制造商全称:Powerex Power Semiconductors 功能描述:Super Fast Recovery Diode Modules 210 Amperes/1200 Volts |
| QRE1240R30 | 制造商:POWEREX 制造商全称:Powerex Power Semiconductors 功能描述:Super Fast Recovery Diode Modules 280 Amperes/1200 Volts |
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