参数资料
型号: QSE114E3R0
厂商: Fairchild Optoelectronics Group
文件页数: 3/4页
文件大小: 0K
描述: PHOTOTRANSISTOR IR 30V SIDELOOKR
标准包装: 2,000
系列: *
电压 - 集电极发射极击穿(最大): 30V
电流 - 暗 (Id)(最大): 100nA
波长: 880nm
视角: 50°
功率 - 最大: 100mW
安装类型: 通孔
方向: 侧视图
封装/外壳: 径向
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
Figure 1. Light Current vs. Radiant Intensity
QSE113
QSE114
10 1
Figure 2. Angular Response Curve
V CE = 5V
GaAs Light Source
110
100
90
80
70
140
130
120
60
50
40
10 0
150
160
170
180
30
20
10
0
10 -1
1.0
0.8
0.6
0.4
0.2
0.0
0.2
0.4
0.6
0.8
1.0
0.1
2
E e - Radiant Intensity (mW/cm )
1
Figure 3. Dark Current vs. Collector - Emitter Voltage
Figure 4. Light Current vs. Collector - Emitter Voltage
10 1
10 0
10 -1
10 -2
10 1
10 0
10 -1
Ie = 1mW/cm 2
Ie = 0.5mW/cm 2
Ie = 0.2mW/cm 2
Ie = 0.1mW/cm 2
Normalized to:
V CE = 5V
Ie = 0.5mW/cm 2
T A = 25 ° C
10 -3
0
5
10
15
20
25
30
10 -2
0.1
1
10
V CE - Collector-Emitter Voltage (V)
Figure 5. Dark Current vs. Ambient Temperature
10 4
Normalized to:
V CE - Collector-Emitter Voltage (V)
10 3
V CE = 25V
T A = 25 ° C
V CE = 25V
V CE = 10V
10 2
10 1
10 0
10 -1
25
50
75
100
T A - Ambient Temperature ( ° C)
? 2002 Fairchild Semiconductor Corporation
Page 3 of 4
5/1/02
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