参数资料
型号: R1LV1616HSA-4LI
厂商: Renesas Technology Corp.
英文描述: Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit)
中文描述: 宽温版本16米的SRAM(1 - Mword】16位/ 2 - Mword】8位)
文件页数: 11/21页
文件大小: 159K
代理商: R1LV1616HSA-4LI
R1LV1616H-I Series
Rev.1.01, Nov.18.2004, page 11 of 19
Read Cycle
R1LV1616H-I
-4SI, -4LI
-5SI
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Read cycle time
t
RC
t
AA
t
ACS1
t
ACS2
t
OE
t
OH
t
BA
t
CLZ1
t
CLZ2
t
BLZ
t
OLZ
t
CHZ1
t
CHZ2
t
BHZ
t
OHZ
45
10
10
45
55
10
10
55
ns
Address access time
ns
Chip select access time
45
55
ns
45
55
ns
Output enable to output valid
Output hold from address change
30
45
20
35
55
20
ns
ns
LB#, UB# access time
ns
Chip select to output in low-Z
ns
2, 3
10
10
ns
2, 3
LB#, UB# enable to low-Z
5
5
ns
2, 3
Output enable to output in low-Z
5
5
ns
2, 3
Chip deselect to output in high-Z
0
0
ns
1, 2, 3
0
20
0
20
ns
1, 2, 3
LB#, UB# disable to high-Z
0
15
0
20
ns
1, 2, 3
Output disable to output in high-Z
0
15
0
20
ns
1, 2, 3
Write Cycle
R1LV1616H-I
-4SI, -4LI
-5SI
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Write cycle time
t
WC
t
AW
t
CW
t
WP
t
BW
t
AS
t
WR
t
DW
t
DH
t
OW
t
OHZ
t
WHZ
45
15
55
20
ns
Address valid to end of write
45
50
ns
Chip selection to end of write
45
50
ns
5
Write pulse width
35
40
ns
4
LB#, UB# valid to end of write
45
50
ns
Address setup time
0
0
ns
6
Write recovery time
0
0
ns
7
Data to write time overlap
25
25
ns
Data hold from write time
0
0
ns
Output active from end of write
5
5
ns
2
Output disable to output in high-Z
0
0
ns
1, 2
Write to output in high-Z
0
15
0
20
ns
1, 2
相关PDF资料
PDF描述
R1LV1616HSA-4SI Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit)
R1LV1616HSA-5SI Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit)
R1LV1616HBG-4SI Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit)
R1LV1616HBG-5SI Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit)
R1LV1616HBG-I Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit)
相关代理商/技术参数
参数描述
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