参数资料
型号: R1LV1616HSA-4LI
厂商: Renesas Technology Corp.
英文描述: Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit)
中文描述: 宽温版本16米的SRAM(1 - Mword】16位/ 2 - Mword】8位)
文件页数: 9/21页
文件大小: 159K
代理商: R1LV1616HSA-4LI
R1LV1616H-I Series
Rev.1.01, Nov.18.2004, page 9 of 19
Notes: 1. Typical values are at V
CC
= 3.0 V, Ta = +25
°
C and not guaranteed.
2. BYTE#
V
CC
0.2 V or BYTE#
0.2 V
3. I
CC2
is the value measured while the valid address is increasing or decreasing by one bit.
Word mode: LSB (least significant bit) is A0.
Byte mode: LSB (least significant bit) is A-1.
Capacitance
(Ta = +25
°
C, f = 1.0 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions Note
Input capacitance
Cin
8
pF
Vin = 0 V
1
Input/output capacitance
Note: 1. This parameter is sampled and not 100% tested.
C
I/O
10
pF
V
I/O
= 0 V
1
相关PDF资料
PDF描述
R1LV1616HSA-4SI Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit)
R1LV1616HSA-5SI Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit)
R1LV1616HBG-4SI Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit)
R1LV1616HBG-5SI Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit)
R1LV1616HBG-I Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit)
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