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参数资料
| 型号： | R1LV1616HSA-4LI |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
| 中文描述： | 宽温版本16米的SRAM（1 - Mword】16位/ 2 - Mword】8位） |
| 文件页数： | 12/21页 |
| 文件大小： | 159K |
| 代理商： | R1LV1616HSA-4LI |
R1LV1616H-I Series
Rev.1.01, Nov.18.2004, page 12 of 19
Byte Control
R1LV1616H-I
-4SI, -4LI
-5SI
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
BYTE# setup time
t
BS
t
BR
5
5
ms
BYTE# recovery time
Notes: 1. t
CHZ
, t
OHZ
, t
WHZ
and t
BHZ
are defined as the time at which the outputs achieve the open circuit
conditions and are not referred to output voltage levels.
2. This parameter is sampled and not 100% tested.
3. At any given temperature and voltage condition, t
HZ
max is less than t
LZ
min both for a given
device and from device to device.
4. A write occurs during the overlap of a low CS1#, a high CS2, a low WE# and a low LB# or a low
UB#. A write begins at the latest transition among CS1# going low, CS2 going high, WE# going
low and LB# going low or UB# going low. A write ends at the earliest transition among CS1#
going high, CS2 going low, WE# going high and LB# going high or UB# going high. t
WP
is
measured from the beginning of write to the end of write.
5. t
CW
is measured from the later of CS1# going low or CS2 going high to the end of write.
6. t
AS
is measured from the address valid to the beginning of write.
7. t
WR
is measured from the earliest of CS1# or WE# going high or CS2 going low to the end of
write cycle.
5
5
ms
相关PDF资料 |
PDF描述 |
|---|---|
| R1LV1616HSA-4SI | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
| R1LV1616HSA-5SI | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
| R1LV1616HBG-4SI | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit) |
| R1LV1616HBG-5SI | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit) |
| R1LV1616HBG-I | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| R1LV1616HSA-4SI | 制造商:Renesas Electronics 功能描述:2M~8 / 1M~16 45ns 3V 48TSOP Tray 制造商:Renesas Electronics Corporation 功能描述:SRAM 16MBIT 3V 45NS 48TSOP 制造商:Renesas 功能描述:SRAM Chip Async Single 3V 16M-Bit 2M/1M x 8/16-Bit 45ns 48-Pin TSOP-I |
| R1LV1616HSA-4SI#B0 | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:SRAM Chip Async Single 3V 16M-Bit 2M/1M x 8/16-Bit 45ns 48-Pin TSOP-I Tray |
| R1LV1616HSA-4SI#BT | 制造商:Renesas Electronics Corporation 功能描述:Memory,Low-pwr SRAM,16M bit,x8 |
| R1LV1616HSA-4SIB0 | 制造商:Renesas Electronics Corporation 功能描述:SRAM, 16Mbit, 2Mx8/1Mx16, 3V, ECC, 45ns |
| R1LV1616HSA-4SIBT | 制造商:Renesas Electronics Corporation 功能描述:Memory,Low-pwr SRAM,16M bit,x8 |
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