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参数资料
| 型号： | R1LV1616HSA-4LI |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
| 中文描述： | 宽温版本16米的SRAM（1 - Mword】16位/ 2 - Mword】8位） |
| 文件页数： | 8/21页 |
| 文件大小： | 159K |
| 代理商： | R1LV1616HSA-4LI |
R1LV1616H-I Series
Rev.1.01, Nov.18.2004, page 8 of 19
DC Characteristics
Parameter
Symbol Min
Typ
Max Unit Test conditions
*
2
Input leakage current
|I
LI
|
|I
LO
|
1
μ
A
μ
A
Vin = V
SS
to V
CC
CS1# = V
IH
or CS2 = V
IL
or
OE# = V
IH
or WE# = V
IL
or
LB# = UB# = V
IH
, V
I/O
= V
SS
to V
CC
CS1# = V
IL
, CS2 = V
IH
,
Others = V
IH
/ V
IL
, I
I/O
= 0 mA
Min. cycle, duty = 100%,
I
I/O
= 0 mA, CS1# = V
IL
, CS2 = V
IH
,
WE# = V
IH
, Others = V
IH
/V
IL
Min. cycle, duty = 100%,
I
I/O
= 0 mA, CS1# = V
IL
, CS2 = V
IH
,
Others = V
IH
/V
IL
Cycle time = 70 ns, duty = 100%,
I
I/O
= 0 mA, CS1# = V
IL
, CS2 = V
IH
,
WE# = V
IH
, Others = V
IH
/V
IL
Address increment scan or
decrement scan
Output leakage current
1
Operating current
I
CC
20
mA
Average operating current
I
CC1
(READ)
22
*
1
35
mA
I
CC1
30
*
1
50
mA
I
CC2
*
3
(READ)
3
*
1
8
mA
I
CC2
*
3
20
*
1
30
mA
Cycle time = 70 ns, duty = 100%,
I
I/O
= 0 mA, CS1# = V
IL
, CS2 = V
IH
,
Others = V
IH
/V
IL
Address increment scan or
decrement scan
Cycle time = 1
μ
s, duty = 100%,
I
I/O
= 0 mA, CS1#
≤
0.2 V,
CS2
≥
V
CC
0.2 V
V
IH
≥
V
CC
0.2 V, V
IL
≤
0.2 V
CS2 = V
IL
0 V
≤
Vin
(1) 0 V
≤
CS2
≤
0.2 V or
(2) CS1#
≥
V
CC
0.2 V,
CS2
≥
V
CC
0.2 V or
(3) LB# = UB#
≥
V
CC
0.2 V,
CS2
≥
V
CC
0.2 V,
CS1#
≤
0.2 V
Average value
I
CC3
3
*
1
8
mA
Standby current
I
SB
I
SB1
0.1
*
1
0.5
*
1
0.5
mA
μ
A
-4SI
-5SI
8
Standby current
-4LI
I
SB1
0.5
*
1
25
μ
A
Output high voltage
V
OH
V
OH
V
OL
V
OL
2.4
V
CC
0.2
0.4
V
I
OH
=
1 mA
I
OH
=
100
μ
A
I
OL
= 2 mA
I
OL
= 100
μ
A
V
Output low voltage
V
0.2
V
相关PDF资料 |
PDF描述 |
|---|---|
| R1LV1616HSA-4SI | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
| R1LV1616HSA-5SI | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit) |
| R1LV1616HBG-4SI | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit) |
| R1LV1616HBG-5SI | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit) |
| R1LV1616HBG-I | Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| R1LV1616HSA-4SI | 制造商:Renesas Electronics 功能描述:2M~8 / 1M~16 45ns 3V 48TSOP Tray 制造商:Renesas Electronics Corporation 功能描述:SRAM 16MBIT 3V 45NS 48TSOP 制造商:Renesas 功能描述:SRAM Chip Async Single 3V 16M-Bit 2M/1M x 8/16-Bit 45ns 48-Pin TSOP-I |
| R1LV1616HSA-4SI#B0 | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:SRAM Chip Async Single 3V 16M-Bit 2M/1M x 8/16-Bit 45ns 48-Pin TSOP-I Tray |
| R1LV1616HSA-4SI#BT | 制造商:Renesas Electronics Corporation 功能描述:Memory,Low-pwr SRAM,16M bit,x8 |
| R1LV1616HSA-4SIB0 | 制造商:Renesas Electronics Corporation 功能描述:SRAM, 16Mbit, 2Mx8/1Mx16, 3V, ECC, 45ns |
| R1LV1616HSA-4SIBT | 制造商:Renesas Electronics Corporation 功能描述:Memory,Low-pwr SRAM,16M bit,x8 |
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