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参数资料
| 型号： | R1Q3A3609ABG-60R |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 36-Mbit QDR™II SRAM 4-word Burst |
| 文件页数： | 12/26页 |
| 文件大小： | 407K |
| 代理商： | R1Q3A3609ABG-60R |
R1Q3A3636/R1Q3A3618/R1Q3A3609
Thermal Resistance
Parameter
Symbol
θ
JA
θ
JC
Typ
24.5
5.6
Unit
°C/W
°C/W
Notes
Junction to Ambient
Junction to Case
Note: These parameters are calculated under the condition of wind velocity = 1 m/s.
Capacitance
(Ta = +25°C, f=1.0MHz, V
DD
= 1.8V, V
DDQ
= 1.5V)
Typ
Max
Unit
2
3
pF
2
3
pF
3
4.5
pF
Parameter
Symbol
C
IN
C
CLK
C
I/O
Min
Test conditions
V
IN
= 0 V
V
CLK
= 0 V
V
I/O
= 0 V
Notes
1, 2
1, 2
1, 2
Input capacitance
Clock input capacitance
Input/output capacitance (D, Q, ZQ)
Notes: 1. These parameters are sampled and not 100% tested.
2. Except JTAG (TCK, TMS, TDI, TDO) pins.
AC Test Conditions
(Ta = 0 to +70°C, V
DD
= 1.8V ±0.1V)
Input waveform (Rise/fall time
≤
0.3 ns)
1.25 V
0.25 V
0.75 V
0.75 V
Test points
Output waveform
V
DDQ
/2
Test points
V
DDQ
/2
REJ03C0295-0003 Rev.0.03 Jul. 31, 2007
Page 12 of 24
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相关代理商/技术参数 |
参数描述 |
|---|---|
| R1Q3A3609ABG60RB0 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
| R1Q3A3609ABG60RS0 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
| R1Q3A3609ABG60RT0 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 2-word Burst |
| R1Q3A3609BBG-33R | 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Sync Dual 1.8V 36M-Bit 4M x 9-Bit 0.45ns 165-Pin FBGA |
| R1Q3A3609BBG-40R | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:36-Mbit QDR?II SRAM 4-word Burst |
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