参数资料
型号: R1WV3216RSD-8S
厂商: Renesas Technology Corp.
英文描述: 32Mb superSRAM (2M wordx16bit)
中文描述: 32兆superSRAM(200万wordx16bit)
文件页数: 10/16页
文件大小: 124K
代理商: R1WV3216RSD-8S
R1W V3216R Series
Rev.1.00
2004.4.13
page 10 of 16
Byte enable (
supported by only
52-pin μTSOP )
BYTE# Timing Waveform
t
BS
BYTE#
CS1#
t
BR
CS2
ms
-
5
-
5
t
BR
Byte recovery time
ms
-
5
-
5
t
BS
Byte setup time
Max.
Min.
Max.
Min.
Notes
Unit
R1WV3216R**-8S
R1WV3216R**-7S
Symbol
Parameter
相关PDF资料
PDF描述
R1WV3216RSD-8SI 32Mb superSRAM (2M wordx16bit)
R1WV3216RSD-8SR 32Mb superSRAM (2M wordx16bit)
R1WV3216RSD-8SW 32Mb superSRAM (2M wordx16bit)
R200CHX DISTRIBUTED GATE THYRISTORS
R210CHX DISTRIBUTED GATE THYRISTORS
相关代理商/技术参数
参数描述
R1WV3216RSD-8SI 制造商:Renesas Electronics Corporation 功能描述:
R1WV3216RSD-8SR 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:32Mb Advanced LPSRAM (2M wordx16bit)
R1WV3216RSD-8SW 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:32Mb superSRAM (2M wordx16bit)
R1WV6416R 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)
R1WV6416RBG-5SI 制造商:Renesas Electronics Corporation 功能描述:SRAM 64MBIT 3V 55NS 48FBGA 制造商:Renesas Electronics Corporation 功能描述:SRAM, 64MBIT, 3V, 55NS, 48FBGA; Memory Size:64Mbit; Memory Configuration:4M x 16bit; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:FBGA; No. of Pins:48; Access Time:55ns; Operating Temperature Min:-40C; ;RoHS Compliant: Yes