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参数资料
| 型号： | R1WV3216RSD-8S |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | 32Mb superSRAM (2M wordx16bit) |
| 中文描述： | 32兆superSRAM（200万wordx16bit） |
| 文件页数： | 6/16页 |
| 文件大小： | 124K |
| 代理商： | R1WV3216RSD-8S |
R1W V3216R Series
Rev.1.00
2004.4.13
page 6 of 16
Recommended Operating Conditions
Note 1. –2.0V in case of AC (Pulse width
≤
30ns)
2. Ambient
temperature range depends on R/W/I-version. Please see table on page 2.
DC Characteristics
I ver.
W ver.
R ver.
2
oC
+85
-
-40
2
oC
+85
-
-20
2
oC
+70
-
0
Ta
Ambient temperature range
1
V
0.4
-
-0.2
V
IL
Input low voltage
V
Vcc+0.2
-
2.4
V
IH
Input high voltage
V
0
0
0
Vss
V
3.6
3.0
2.7
Vcc
Supply voltage
Note
Unit
Max.
Typ.
Min.
Symbol
Parameter
Note 1. Typical parameter indicates the value for the center of distribution at 3.0V (Ta= 25
oC
), and not 100% tested.
2. BYTE# pin supported by only TSOP type.
BYTE#
≥
Vcc-0.2V or BYTE#
≤
0.2V
~+85oC
μA
80
-
-
I
OL
= 2mA
V
0.4
-
-
V
OL
Output Low voltage
I
OH
= -1mA
V
-
-
2.4
V
OH
Output hige voltage
V in
≥
0V
(1) 0V
≤
CS2
≤
0.2V or
(2) CS2
≥
Vcc-0.2V,
CS1#
≥
Vcc-0.2V or
(3)LB# =UB#
≥
Vcc-0.2V,
CS2
≥
Vcc-0.2V,
CS1#
≤
0.2V
Average value
~+70oC
μA
50
-
-
~+40oC
μA
24
7
-
~+25oC
μA
12
4
-
I
SB1
Standby current
CS2=V
IL
mA
0.3
0.1
-
I
SB
Standby current
mA
20
15
-
Icc
2
Read
Cycle time = 1 μs,
I
I/O
= 0 mA,
CS1#
≤
0.2V, CS2
≥
V
CC
-0.2V
V
IH
≥
V
CC
-0.2V , V
IL
≤
0.2V,
Write & Read duty=100%
respectively
mA
25
20
-
Icc
2
Write
Min. cycle, duty =100%
I
I/O
= 0 mA, CS1# =V
IL
,
CS2=V
IH
Others = V
IH
/ V
IL
mA
70
60
-
Icc
1
Average operating
current
CS1# =V
IH or
CS2=V
IL or
OE# = V
IH
or WE# =V
IL
or
LB# =UB# =V
IH,
V
I/O
=Vss to Vcc
μA
1
-
-
|I
Lo
|
Output leakage current
Vin=Vss to Vcc
μA
1
-
-
|I
LI
|
Input leakage current
Test conditions
*2
Unit
Max.
Typ.
*1
Min.
Symbol
Parameter
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相关代理商/技术参数 |
参数描述 |
|---|---|
| R1WV3216RSD-8SI | 制造商:Renesas Electronics Corporation 功能描述: |
| R1WV3216RSD-8SR | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:32Mb Advanced LPSRAM (2M wordx16bit) |
| R1WV3216RSD-8SW | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:32Mb superSRAM (2M wordx16bit) |
| R1WV6416R | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit) |
| R1WV6416RBG-5SI | 制造商:Renesas Electronics Corporation 功能描述:SRAM 64MBIT 3V 55NS 48FBGA 制造商:Renesas Electronics Corporation 功能描述:SRAM, 64MBIT, 3V, 55NS, 48FBGA; Memory Size:64Mbit; Memory Configuration:4M x 16bit; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:FBGA; No. of Pins:48; Access Time:55ns; Operating Temperature Min:-40C; ;RoHS Compliant: Yes |
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