型号: | R1WV3216RSD-8S |
厂商: | Renesas Technology Corp. |
英文描述: | 32Mb superSRAM (2M wordx16bit) |
中文描述: | 32兆superSRAM(200万wordx16bit) |
文件页数: | 12/16页 |
文件大小: | 124K |
代理商: | R1WV3216RSD-8S |
相关PDF资料 |
PDF描述 |
---|---|
R1WV3216RSD-8SI | 32Mb superSRAM (2M wordx16bit) |
R1WV3216RSD-8SR | 32Mb superSRAM (2M wordx16bit) |
R1WV3216RSD-8SW | 32Mb superSRAM (2M wordx16bit) |
R200CHX | DISTRIBUTED GATE THYRISTORS |
R210CHX | DISTRIBUTED GATE THYRISTORS |
相关代理商/技术参数 |
参数描述 |
---|---|
R1WV3216RSD-8SI | 制造商:Renesas Electronics Corporation 功能描述: |
R1WV3216RSD-8SR | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:32Mb Advanced LPSRAM (2M wordx16bit) |
R1WV3216RSD-8SW | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:32Mb superSRAM (2M wordx16bit) |
R1WV6416R | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit) |
R1WV6416RBG-5SI | 制造商:Renesas Electronics Corporation 功能描述:SRAM 64MBIT 3V 55NS 48FBGA 制造商:Renesas Electronics Corporation 功能描述:SRAM, 64MBIT, 3V, 55NS, 48FBGA; Memory Size:64Mbit; Memory Configuration:4M x 16bit; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:FBGA; No. of Pins:48; Access Time:55ns; Operating Temperature Min:-40C; ;RoHS Compliant: Yes |