参数资料
型号: R5019ANJTL
厂商: Rohm Semiconductor
文件页数: 3/6页
文件大小: 0K
描述: MOSFET N-CH 500V 19A LPTS
产品目录绘图: MOSFET LPTS
特色产品: ECOMOS? Series MOSFETs
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 500V
电流 - 连续漏极(Id) @ 25° C: 19A
功率 - 最大: 100W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: LPTS
包装: 标准包装
其它名称: R5019ANJTLDKR
R5019ANJ
? Electrical characteristic curves
Fig.1 Typical Output Characteristics ( Ⅰ )
 
Fig.2 Typical Output Characteristics ( Ⅱ )
Data Sheet
Fig.3 Typical Transfer Characteristics
5
4
3
2
1
T a =25 ℃ V GS =10.0V
pulsed V GS =8.0V
V GS = 7.0V
V GS =6.5V
V GS =6.0V
V GS =5.0V
V GS =4.5V
18
16
14
12
10
8
6
4
2
T a =25 ℃
V GS =10.0V pulsed
V GS =8.0V
V GS =6.5V
V GS =7.0V
V GS =6.0V
V GS =5.0V
V GS =4.5
100
10
1
0.1
0.01
V DS = 10V
Pulsed
T a =125 ℃
T a = 75 ℃
T a = 25 ℃
T a = - 25 ℃
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
0
0
1
2
3
4
5
6
7
8
9
10
0.001
0
1
2
3
4
5
6
7
Drain-Source Voltage : V DS [V]
Fig.4 Gate Threshold Voltage
vs. Channel Temperature
Drain-Source Voltage : V DS [V]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current
GATE-SOURCE VOLTAGE : V GS (V)
Fig.6 Static Drain-Source On-State Resistance vs.
Gate-Source Voltage
6
5
4
V DS = 10V
I D = 1mA
10
1
V GS = 10V
Pulsed
T a =125 ℃
T a = 75 ℃
T a = 25 ℃
T a = - 25 ℃
0.5
0.4
T a =25 ℃
pulsed
3
0.3
I D =19A
2
1
0.1
0.2
0.1
I D =9.5A
0
-50
0
50
100
150
0.01
0.1
1
10
100
0
0
2
4
6
8
10 12 14 16 18 20
CHANNEL TEMPERATURE: T ch ( ℃ )
Fig.7 Static Drain-Source On-State
Resistance vs. Channel Temperature
DRAIN CURRENT : I D (A)
Fig.8 Forward Transfer Admittance
vs. Drain Current
Gate-Source Voltage : V GS [V]
Fig.9 Source Current vs.
Sourse-Drain Voltage
0.5
0.4
V GS = 10V
Pulsed
100
10
V DS = 10V
Pulsed
100
10
V GS = 0V
Pulsed
0.3
I D = 19.0A
0.2
0.1
I D = 9.5A
1
0.1
T a =125 ℃
T a = 75 ℃
T a = 25 ℃
T a = - 25 ℃
1
0.1
T a =125 ℃
T a = 75 ℃
T a = 25 ℃
T a = - 25 ℃
0
-50 -25
0
25
50
75
100 125 150
0.01
0.01
0.1
1
10
100
0.01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
CHANNEL TEMPERATURE: T ch ( ℃ )
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
DRAIN CURRENT : I D (A)
3/5
SOURCE-DRAIN VOLTAGE : V SD (V)
2011.10 - Rev.A
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