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| 型号： | R8002ANX |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 14/14页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 800V 2A TO-220FM |
| 标准包装： | 500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 800V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.3 欧姆 @ 1A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 12.7nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 210pF @ 25V |
| 功率 - 最大： | 35W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220FM |
| 包装： | 散装 |
Notice
Notes
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? 2012 ROHM Co., Ltd. All rights reserved.
R1120A
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