参数资料
型号: R8002ANX
厂商: Rohm Semiconductor
文件页数: 4/14页
文件大小: 0K
描述: MOSFET N-CH 800V 2A TO-220FM
标准包装: 500
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 800V
电流 - 连续漏极(Id) @ 25° C: 2A
开态Rds(最大)@ Id, Vgs @ 25° C: 4.3 欧姆 @ 1A,10V
Id 时的 Vgs(th)(最大): 5V @ 1mA
闸电荷(Qg) @ Vgs: 12.7nC @ 10V
输入电容 (Ciss) @ Vds: 210pF @ 25V
功率 - 最大: 35W
安装类型: 通孔
封装/外壳: TO-220-3 整包
供应商设备封装: TO-220FM
包装: 散装
R8002ANX
l Body diode electrical characteristics (Source-Drain)(T a = 25°C)
Data Sheet
Parameter
Inverse diode continuous,
forward current
Symbol
I S *1
Conditions
Min.
-
Values
Typ.
-
Max.
2
Unit
A
T c = 25°C
Inverse diode direct current,
pulsed
I SM *2
-
-
8
A
Forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
V SD *6
t rr *6
Q rr *6
I rrm *6
di rr /dt
V GS = 0V, I S = 2A
I S = 2A
di/dt = 100A/us
T j = 25°C
-
-
-
-
-
-
481
2.5
10.5
50
1.5
-
-
-
-
V
ns
m C
A
A/ m s
l Typical Transient Thermal Characteristics
Symbol
R th1
R th2
R th3
Value
0.486
1.31
1.96
Unit
K/W
Symbol
C th1
C th2
C th3
Value
0.00095
0.0112
0.521
Unit
Ws/K
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
4/13
2012.10 - Rev.B
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