参数资料
型号: R8002ANX
厂商: Rohm Semiconductor
文件页数: 7/14页
文件大小: 0K
描述: MOSFET N-CH 800V 2A TO-220FM
标准包装: 500
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 800V
电流 - 连续漏极(Id) @ 25° C: 2A
开态Rds(最大)@ Id, Vgs @ 25° C: 4.3 欧姆 @ 1A,10V
Id 时的 Vgs(th)(最大): 5V @ 1mA
闸电荷(Qg) @ Vgs: 12.7nC @ 10V
输入电容 (Ciss) @ Vds: 210pF @ 25V
功率 - 最大: 35W
安装类型: 通孔
封装/外壳: TO-220-3 整包
供应商设备封装: TO-220FM
包装: 散装
R8002ANX
l Electrical characteristic curves
Fig.7 Typical Output Characteristics(I)
2
Data Sheet
Fig.8 Typical Output Characteristics(II)
2
10.0V
T a =25oC
Pulsed
T a =25oC
Pulsed
8.0V
7.0V
1.5
10.0V
8.0V
1
6.5V
1
7.0V
6.5V
5.5V
6.0V
V GS = 5.0V
0.5
6.0V
5.5V
V GS = 5.0V
0
0
10
20
30
40
50
0
0
1
2
3
4
5
Drain - Source Voltage : V DS [V]
Fig.9 T j = 150 ° C Typical Output
Characteristics(I)
Drain - Source Voltage : V DS [V]
Fig.10 T j = 150 ° C Typical Output
Characteristics(II)
2.0
10.0V
T a = 150oC
Pulsed
1.0
T a = 150oC
Pulsed
1.5
8.0V
10.0V
1.0
7.0V 6.5V 6.0V 5.5V
0.5
7.0V
8.0V
0.5
6.5V
6.0V
5.5V
0.0
0
10
20
30
V GS = 5.0V
40
50
0.0
0
1
2
3
V GS = 5.0V
4
5
Drain - Source Voltage : V DS [V]
Drain - Source Voltage : V DS [V]
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? 2012 ROHM Co., Ltd. All rights reserved.
7/13
2012.10 - Rev.B
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