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参数资料
| 型号： | RB751V40T1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 117K |
| 描述： | DIODE SCHOTTKY 40V 1MA SOD323 |
| 产品变化通告： | Product Discontinuation 27/Jun/2007 |
| 标准包装： | 10 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 30V |
| 电流 - 平均整流 (Io)： | 30mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 370mV @ 1mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 电流 - 在 Vr 时反向漏电： | 500nA @ 30V |
| 电容@ Vr, F： | 2.5pF @ 1V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-76，SOD-323 |
| 供应商设备封装： | SOD-323 |
| 包装： | 剪切带 (CT) |
| 工具箱： | SMSIGDIODEA-KIT-ND - KIT SMALL SIGNAL DIODE DESIGN |
| 其它名称： | RB751V40T1OSCT |
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Semiconductor Components Industries, LLC, 2010
October, 2010 -- Rev. 4
1
Publication Order Number:
RB751V40T1/D
RB751V40T1G
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
?
Extremely Fast Switching Speed
?
Extremely Low Forward Voltage -- 0.28 Volts (Typ) @ IF
=1mAdc
?
Low Reverse Current
?
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Reverse Voltage
VRM
40
V
Reverse Voltage
VR
30
Vdc
Forward Continuous Current (DC)
IF
30
mA
Peak Forward Surge Current
IFSM
500
mA
Electrostatic Discharge
ESD
HBM Class: 1C
MM Class: A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR--5 Board,
(Note 1) TA
=25?C
Derate above 25?C
PD
200
1.57
mW
mW/?C
Thermal Resistance
Junction--to--Ambient
RθJA
635
?C/W
Junction and Storage
Temperature Range
TJ,Tstg
-- 5 5 t o
+150
?C
Stresses exceeding Maximum Ratings
may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR--5 Minimum Pad
40 V SCHOTTKY
BARRIER DIODE
Device Package Shipping?
ORDERING INFORMATION
SOD--323
CASE 477
STYLE 1
1
CATHODE
2
ANODE
5E = Specific Device Code
M = Date Code
G
= Pb--Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
5E MG
G
RB751V40T1G SOD--323
(Pb--Free)
3000/Tape & Reel
http://onsemi.com
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| RB751V40T1/D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Schottky Barrier Diode |
| RB751V40T1G | 功能描述:肖特基二极管与整流器 40V 200mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| RB751V40T1G | 制造商:ON Semiconductor 功能描述:Small Signal Diode |
| RB751V-40TE17 | 制造商:ROHM Semiconductor 功能描述: |
| RB751V-40TE-17 | 功能描述:肖特基二极管与整流器 SCHOTTKY 40V 30MA RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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