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参数资料
| 型号： | RCD080N25TL |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 3/13页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 250V 8A SOT-428 |
| 产品目录绘图： | MOSFET SOT-428 |
| 特色产品： | ECOMOS? Series MOSFETs |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 250V |
| 电流 - 连续漏极(Id) @ 25° C： | 8A |
| 功率 - 最大： | 20W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-428 |
| 供应商设备封装： | CPT3 |
| 包装： | 标准包装 |
| 其它名称： | RCD080N25TLDKR |
RCD080N25
l Electrical characteristics (T a = 25°C)
Values
Data Sheet
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Input capacitance
C iss
V GS = 0V
-
1440
-
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
C oss
C rss
t d(on) *5
t r *5
t d(off) *5
t f *5
V DS = 25V
f = 1MHz
V DD ? 125V, V GS = 10V
I D = 4.0A
R L = 31.25 W
R G = 10 W
-
-
-
-
-
-
80
40
30
40
40
15
-
-
-
-
-
-
pF
ns
l Gate Charge characteristics (T a = 25°C)
Values
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Total gate charge
Q g *5
V DD ? 125V
-
25
-
Gate - Source charge
Q gs *5
I D = 8.0A
-
10
-
nC
Gate - Drain charge
Q gd
*5
V GS = 10V
-
10
-
Gate plateau voltage
V (plateau)
V DD ? 125V, I D = 8.0A
-
7.3
-
V
l Body diode electrical characteristics (Source-Drain)(T a = 25°C)
Values
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Continuous source current
Pulsed source current
Forward voltage
Reverse recovery time
Reverse recovery charge
I S *1
I SM *2
V SD *5
t rr *5
Q rr *5
T c = 25°C
V GS = 0V, I S = 8.0A
I S = 4.0A
di/dt = 100A/ m s
-
-
-
-
-
-
-
-
100
350
8
32
1.5
-
-
A
A
V
ns
nC
*1 Limited only by maximum temperature allowed.
*2 Pw ? 10 m s, Duty cycle ? 1%
*3 L ? 500 m H, V DD = 50V, Rg = 25 W , starting T j = 25°C
*4 Mounted on a epoxy PCB FR4 (20mm × 20mm × 0.8mm)
*5 Pulsed
www.rohm.com
? 2014 ROHM Co., Ltd. All rights reserved.
3/12
2014.01 - Rev.B
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