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参数资料
| 型号： | RFD3055LE |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 11A I-PAK |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品目录绘图： | I-PAK, I2PAK Pkg |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 107 毫欧 @ 8A，5V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11.3nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 350pF @ 25V |
| 功率 - 最大： | 38W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
RFD3055LE, RFD3055LESM
Data Sheet
N-Channel Logic Level Power MOSFET
60V, 11A, 107 m?
These N-Channel enhancement-mode power MOSFETs are
manufactured using the latest manufacturing process
technology. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49158.
Ordering Information
September 20 13
Features
? 11A, 60V
? r DS(ON) = 0.107 ?
? Temperature Compensating PSPICE ? Model
? Peak Current vs Pulse Width Curve
? UIS Rating Curve
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
PART NUMBER
RFD3055LE
PACKAGE
TO-251AA
BRAND
F3055L
RFD3055LESM 9A
TO-252AA
F3055L
G
S
Packaging
JEDEC TO-251AA
DRAIN (FLANGE)
?2002 Fairchild Semiconductor Corporation
SOURCE
DRAIN
GATE
GATE
SOURCE
JEDEC TO-252AA
DRAIN (FLANGE)
RFD3055LE, RFD3055LESM Rev. C0
相关PDF资料 |
PDF描述 |
|---|---|
| 210-12MSTFD | SWITCH RAISED ACTUATOR 12 SEC |
| 210-12LPSTFD | SWITCH SPST 12 SEC LOW PROFILE |
| 210-12MSTD | SWITCH RAISED ACTUATOR 12 SEC |
| 210-12LPSTD | SWITCH SPST 12 SEC STRAIGHT TERM |
| 210-12MSD | SWITCH RAISED ACTUATOR 12 SEC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| RFD3055LE | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 60V, 11A TO-251AA |
| RFD3055LE_Q | 功能描述:MOSFET TO-251AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| RFD3055LE_R4470 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFD3055LE_R4821 | 功能描述:MOSFET N-Ch Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| RFD3055LESM | 功能描述:MOSFET TO-252AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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