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参数资料
| 型号： | RFD3055LE |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 11A I-PAK |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品目录绘图： | I-PAK, I2PAK Pkg |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 107 毫欧 @ 8A，5V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11.3nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 350pF @ 25V |
| 功率 - 最大： | 38W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
RFD3055LE, RFD3055LESM
Absolute Maximum Ratings T C = 25 o C, Unless Otherwise Speci?ed
RFD3055LE,
RFD3055LESM 9A
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V DSS
Drain to Gate Voltage (R GS = 20k ? ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I DM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P D
Derate Above 25 o C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T J , T STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . T pkg
60
60
± 16
11
Refer to Peak Current Curve
Refer to UIS Curve
38
0.25
-55 to 175
300
260
V
V
V
A
W
W/ o C
o C
o C
o C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speci?cation is not implied.
NOTE:
1. T J = 25 o C to 150 o C.
Electrical Speci?cations
T C = 25 o C, Unless Otherwise Speci?ed
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
SYMBOL
BV DSS
V GS(TH)
I DSS
I GSS
r DS(ON)
t ON
t d(ON)
t r
t d(OFF)
t f
t OFF
TEST CONDITIONS
I D = 250 μ A, V GS = 0V
V GS = V DS , I D = 250 μ A
V DS = 55V, V GS = 0V
V DS = 50V, V GS = 0V, T C = 150 o C
V GS = ± 16V
I D = 8A, V GS = 5V (Figure 11)
V DD ≈ 30V, I D = 8A,
V GS = 4.5V, R GS = 32 ?
(Figures 10, 18, 19)
MIN
60
1
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
8
105
22
39
-
MAX
-
3
1
250
± 100
0.107
170
-
-
-
-
92
UNITS
V
V
μ A
μ A
nA
?
ns
ns
ns
ns
ns
ns
Total Gate Charge
Gate Charge at 5V
Q g(TOT)
Q g(5)
V GS = 0V to 10V
V GS = 0V to 5V
V DD = 30V, I D = 8A,
I g(REF) = 1.0mA
(Figures 20, 21)
-
-
9.4
5.2
11.3
6.2
nC
nC
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Q g(TH)
C ISS
C OSS
C RSS
R θ JC
R θ JA
V GS = 0V to 1V
V DS = 25V, V GS = 0V, f = 1MHz
(Figure 14)
TO-220AB
TO-251AA, TO-252AA
-
-
-
-
-
-
-
0.36
350
105
23
-
-
-
0.43
-
-
-
3.94
62
100
nC
pF
pF
pF
o C/W
o C/W
o C/W
Source to Drain Diode Speci?cations
PARAMETER
Source to Drain Diode Voltage
Diode Reverse Recovery Time
SYMBOL
V SD
t rr
TEST CONDITIONS
I SD = 8A
I SD = 8A, dI SD /dt = 100A/ μ s
MIN
TYP
-
-
MAX
1.25
66
UNITS
V
ns
NOTES:
2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
?2002 Fairchild Semiconductor Corporation
RFD3055LE, RFD3055LESM Rev. C0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| RFD3055LE | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 60V, 11A TO-251AA |
| RFD3055LE_Q | 功能描述:MOSFET TO-251AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| RFD3055LE_R4470 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFD3055LE_R4821 | 功能描述:MOSFET N-Ch Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| RFD3055LESM | 功能描述:MOSFET TO-252AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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