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参数资料
| 型号： | RFD3055LE |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 11A I-PAK |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品目录绘图： | I-PAK, I2PAK Pkg |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 107 毫欧 @ 8A，5V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11.3nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 350pF @ 25V |
| 功率 - 最大： | 38W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
| 产品目录页面： | 1608 (CN2011-ZH PDF) |
RFD3055LE, RFD3055LESM
Typical Performance Curves Unless Otherwise Speci?ed (Continued)
100
15
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
12
V GS = 10V
V GS = 5V
V GS = 4V
10
STARTING T J = 25 o C
9
V GS = 3.5V
STARTING T J = 150 o C
6
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
3
1
0
T C = 25 o C
V GS = 3V
0.001
0.01
0.1
1
10
0
1 2 3
4
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
15
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
150
12
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
I D = 3A
I D = 11A
I D = 5A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T C = 25 o C
120
9
6
T J = 25 o C
90
3
0
T J = 175 o C
T J = -55 o C
60
2
3
4
5
2
4 6 8
10
150
V GS , GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
V GS = 4.5V, V DD = 30V, I D = 8A
V GS , GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
2.5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
t r
2.0
100
1.5
t f
50
0
t d(OFF)
t d(ON)
1.0
0.5
V GS = 10V, I D = 11A
0
10
20
30
40
50
-80
-40
0
40
80
120
160
200
R GS , GATE TO SOURCE RESISTANCE ( ? )
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
?2002 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
RFD3055LE, RFD3055LESM Rev. C0
相关PDF资料 |
PDF描述 |
|---|---|
| 210-12MSTFD | SWITCH RAISED ACTUATOR 12 SEC |
| 210-12LPSTFD | SWITCH SPST 12 SEC LOW PROFILE |
| 210-12MSTD | SWITCH RAISED ACTUATOR 12 SEC |
| 210-12LPSTD | SWITCH SPST 12 SEC STRAIGHT TERM |
| 210-12MSD | SWITCH RAISED ACTUATOR 12 SEC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| RFD3055LE | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 60V, 11A TO-251AA |
| RFD3055LE_Q | 功能描述:MOSFET TO-251AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| RFD3055LE_R4470 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFD3055LE_R4821 | 功能描述:MOSFET N-Ch Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| RFD3055LESM | 功能描述:MOSFET TO-252AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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