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参数资料
| 型号： | RP1A090ZPTR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 6/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 9A MPT6 |
| 产品目录绘图： | MOSFET P-Channel MPT6 |
| 特色产品： | ECOMOS? Series MOSFETs |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12 毫欧 @ 9A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 59nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 7400pF @ 6V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-SMD，扁平引线 |
| 供应商设备封装： | MPT6 |
| 包装： | 标准包装 |
| 其它名称： | RP1A090ZPDKR |
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Notes
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R1010 A
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