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参数资料
| 型号： | RRQ030P03TR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 12/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 3A TUMT6 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 75 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 5.2nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 480pF @ 10V |
| 功率 - 最大： | 1.25W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-95-6 |
| 供应商设备封装： | TSMT6 |
| 包装： | 带卷 (TR) |
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Notes
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R1120A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| RRQ045P03 | 制造商:ROHM 制造商全称:Rohm 功能描述:4V Drive Pch MOSFET |
| RRQ045P03TR | 功能描述:MOSFET Med Pwr, Sw MOSFET P Chan, -30V, -4.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| RRQUADESATA6GB/SFORMAC | 制造商:Highpoint Technology 功能描述:HIGHPOINT - Bulk |
| RRR015P03 | 制造商:ROHM 制造商全称:Rohm 功能描述:4V Drive Pch MOSFET |
| RRR015P03TL | 功能描述:MOSFET P-CH 30V 1.5A TSMT3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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