参数资料
型号: S29CL032J0JFFM020
厂商: SPANSION LLC
元件分类: PROM
英文描述: 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80
封装: 13 X 11 MM, 1 MM PITCH, LEAD FREE, FORTIFIED, BGA-80
文件页数: 25/79页
文件大小: 2994K
代理商: S29CL032J0JFFM020
March 30, 2009 S29CD-J_CL-J_00_B3
S29CD-J & S29CL-J Flash Family
31
Data
She e t
8.7.2
Sector Erase
The sector erase function erases one or more sectors in the memory array. (See Table 20.1, Memory Array
does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically
programs and verifies the entire memory for an all-zero data pattern prior to electrical erase. After a
successful sector erase, all locations within the erased sector contain FFFFh. The system is not required to
provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-out of no less than 80 s occurs. During the time-
out period, additional sector addresses and sector erase commands may be written. Loading the sector erase
buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The
time between these additional cycles must be less than 80 s. Any sector erase address and command
following the exceeded time-out (80 s) may or may not be accepted. A time-out of 80 s from the rising edge
of the last WE# (or CE#) initiates the execution of the Sector Erase command(s). If another falling edge of the
WE# (or CE#) occurs within the 80 s time-out window, the timer is reset. Any command other than Erase
Suspend during the time-out period will be interpreted as an additional sector to erase. The device does not
decode the data bus, but latches the address. (See S29CD016J Sector Erase Time-Out Functionality
Application Note for further information.). The system can monitor DQ3 to determine if the sector erase timer
has timed out (See Section 8.8.6, DQ3: Sector Erase Timer on page 40.) The time-out begins from the rising
edge of the final WE# pulse in the command sequence.
When the Embedded Erase algorithm is complete, the bank returns to reading array data; addresses are no
longer latched. The system can determine the status of the erase operation by reading DQ7 or DQ6/DQ2 in
the erasing bank. Refer to Section 8.8, Write Operation Status on page 34 for information on these status
bits.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands
are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs,
the sector erase command sequence should be re-initiated once that bank has returned to reading array
data, in order to ensure data integrity.
Figure 8.6 on page 32 illustrates the algorithm for the erase operation. Refer to Section 8.7, Program/Erase
Operations on page 29 for parameters and timing diagrams.
8.7.3
Chip Erase
Chip erase is a six-bus cycle operation as indicated by Section 20.1, Command Definitions on page 73. The
Chip Erase command is used to erase the entire flash memory contents of the chip by issuing a single
command. However, chip erase does not erase protected sectors.
This command invokes the Embedded Erase algorithm, which does not require the system to preprogram
prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for
an all-zero data pattern prior to electrical erase. After a successful chip erase, all locations of the chip contain
FFFFh. The system is not required to provide any controls or timings during these operations. Section 20.1 in
the appendix shows the address and data requirements for the chip erase command sequence.
When the Embedded Erase algorithm is complete, that bank returns to the read mode and addresses are no
longer latched. The system can determine the status of the erase operation by using DQ7, DQ6 or the RY/
BY#. Refer to Section 8.8, Write Operation Status on page 34 for information on these status bits.
Any commands written during the chip erase operation are ignored. However, note that a hardware reset
immediately terminates the erase operation. If that occurs, the chip erase command sequence should be
reinitiated once that bank has returned to reading array data, to ensure data integrity.
相关PDF资料
PDF描述
S29CL032J0RFAM012 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80
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