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参数资料
| 型号： | S29GL032A11BFIR43 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| 中文描述： | 2M X 16 FLASH 3V PROM, 110 ns, PBGA48 |
| 封装： | 8.15 X 6.15 MM, LEAD FREE, FBGA-48 |
| 文件页数： | 34/95页 |
| 文件大小： | 3585K |
| 代理商： | S29GL032A11BFIR43 |
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S29GL-A
S29GL-A_00_A12 May 21, 2008
Da ta
Sh e e t
General Description
The S29GL-A family of devices are 3.0-Volt single-power Flash memory manufactured using 200 nm
MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes.
The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. The S29Gl016A is a
16-Mb device organized as 1,048,576 words or 2,097,152 bytes. Depending on the model number, the
devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also
function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the
host system or in standard EPROM programmers.
Access times as fast as 90 ns are available. Note that each access time has a specific operating voltage
range (VCC) as specified in the Product Selector Guide on page 9 and the Ordering Information on page 19.
Package offerings include 48-pin TSOP, 56-pin TSOP, 48-ball fine-pitch BGA and 64-ball Fortified BGA,
depending on model number. Each device has separate chip enable (CE#), write enable (WE#) and output
enable (OE#) controls.
Each device requires only a single 3.0-Volt power supply for both read and write functions. In addition to a
VCC input, a high-voltage accelerated program (ACC) feature provides shorter programming times through
increased current on the WP#/ACC input. This feature is intended to facilitate factory throughput during
system production, but may also be used in the field if desired.
The device is entirely command set compatible with the JEDEC single-power-supply Flash standard.
Commands are written to the device using standard microprocessor write timing. Write cycles also internally
latch addresses and data needed for the programming and erase operations.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully erased when shipped from the factory.
Device programming and erasure are initiated through command sequences. Once a program or erase
operation begins, the host system need only poll the DQ7 (Data# Polling) or DQ6 (toggle) status bits or
monitor the Ready/Busy# (RY/BY#) output to determine whether the operation is complete. To facilitate
programming, an Unlock Bypass mode reduces command sequence overhead by requiring only two write
cycles to program data instead of four.
Hardware data protection measures include a low VCC detector that automatically inhibits write operations
during power transitions. The hardware sector protection feature disables both program and erase operations
in any combination of sectors of memory. This can be achieved in-system or via programming equipment.
The Erase Suspend/Erase Resume feature allows the host system to pause an erase operation in a given
sector to read or program any other sector and then complete the erase operation. The Program Suspend/
Program Resume feature enables the host system to pause a program operation in a given sector to read
any other sector and then complete the program operation.
The hardware RESET# pin terminates any operation in progress and resets the device, after which it is then
ready for a new operation. The RESET# pin may be tied to the system reset circuitry. A system reset would
thus also reset the device, enabling the host system to read boot-up firmware from the Flash memory device.
The device reduces power consumption in the standby mode when it detects specific voltage levels on CE#
and RESET#, or when addresses are stable for a specified period of time.
The Write Protect (WP#) feature protects the first or last sector by asserting a logic low on the WP#/ACC pin
or WP# pin, depending on model number. The protected sector is still protected even during accelerated
programming.
The Secured Silicon Sector provides a 128-word/256-byte area for code or data that can be permanently
protected. Once this sector is protected, no further changes within the sector can occur.
Spansion MirrorBit flash technology combines years of Flash memory manufacturing experience to produce
the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a
sector simultaneously via hot-hole assisted erase. The data is programmed using hot electron injection.
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| S29GL032A90TAIR22 | 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| S29GL032A90TAIR23 | 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| S29GL032A90TAIR30 | 64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S29GL032A11FAIR10 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| S29GL032A11FAIR11 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| S29GL032A11FAIR12 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| S29GL032A11FAIR13 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
| S29GL032A11FAIR20 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY |
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