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参数资料
型号： S29WS128N0LBFI011
厂商： Spansion Inc.
英文描述： 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
中文描述： 256/128/64兆位的CMOS 1.8伏只有同时读/写突发模式闪存
文件页数： 56/99页
文件大小： 1091K
代理商： S29WS128N0LBFI011
4
S29WS-N MirrorBit Flash Family
S29WS-N_00_G0 January25,2005
Adva nce
Information
Figures
Figure 3.1.
S29WS-N Block Diagram..................................................................................................................... 8
Figure 4.1.
84-ball Fine-Pitch Ball Grid Array (S29WS256N, S29WS128N).................................................................10
Figure 4.2.
VBH084—84-ball Fine-Pitch Ball Grid Array (FBGA) 8 x 11.6 mm MCP Compatible Package .........................11
Figure 4.3.
80-ball Fine-Pitch Ball Grid Array (S29WS064N) ....................................................................................12
Figure 4.4.
TLC080—80-ball Fine-Pitch Ball Grid Array (FBGA) 7 x 9 mm MCP Compatible Package...............................13
Figure 4.5.
MCP Look-ahead Diagram ..................................................................................................................15
Figure 7.1.
Synchronous/Asynchronous State Diagram...........................................................................................21
Figure 7.2.
Synchronous Read ............................................................................................................................23
Figure 7.3.
Single Word Program.........................................................................................................................29
Figure 7.4.
Write Buffer Programming Operation ...................................................................................................33
Figure 7.5.
Sector Erase Operation ......................................................................................................................36
Figure 7.6.
Write Operation Status Flowchart ........................................................................................................43
Figure 8.1.
Advanced Sector Protection/Unprotection .............................................................................................50
Figure 8.2.
PPB Program/Erase Algorithm .............................................................................................................53
Figure 8.3.
Lock Register Program Algorithm.........................................................................................................56
Figure 11.1. Maximum Negative Overshoot Waveform .............................................................................................64
Figure 11.2. Maximum Positive Overshoot Waveform...............................................................................................64
Figure 11.3. Test Setup .......................................................................................................................................64
Figure 11.4. Input Waveforms and Measurement Levels...........................................................................................66
Figure 11.5. VCC Power-up Diagram ......................................................................................................................66
Figure 11.6. CLK Characterization .........................................................................................................................68
Figure 11.7. CLK Synchronous Burst Mode Read......................................................................................................70
Figure 11.8. 8-word Linear Burst with Wrap Around.................................................................................................71
Figure 11.9. 8-word Linear Burst without Wrap Around ............................................................................................71
Figure 11.10. Linear Burst with RDY Set One Cycle Before Data ..................................................................................72
Figure 11.11. Asynchronous Mode Read...................................................................................................................73
Figure 11.12. Reset Timings...................................................................................................................................74
Figure 11.13. Chip/Sector Erase Operation Timings ...................................................................................................76
Figure 11.14. Asynchronous Program Operation Timings............................................................................................77
Figure 11.15. Synchronous Program Operation Timings .............................................................................................78
Figure 11.16. Accelerated Unlock Bypass Programming Timing ...................................................................................79
Figure 11.17. Data# Polling Timings (During Embedded Algorithm) .............................................................................79
Figure 11.18. Toggle Bit Timings (During Embedded Algorithm) ..................................................................................80
Figure 11.19. Synchronous Data Polling Timings/Toggle Bit Timings ............................................................................80
Figure 11.20. DQ2 vs. DQ6 ....................................................................................................................................81
Figure 11.21. Latency with Boundary Crossing when Frequency > 66 MHz....................................................................81
Figure 11.22. Latency with Boundary Crossing into Program/Erase Bank ......................................................................82
Figure 11.23. Example of Wait States Insertion ........................................................................................................83
Figure 11.24. Back-to-Back Read/Write Cycle Timings ...............................................................................................84
相关PDF资料
PDF描述
S29WS128N0LBFI012 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI013 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI110 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFW010 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS256N0PBAW011 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
相关代理商/技术参数
参数描述
S29WS128N0LBFI012 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI013 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
S29WS128N0LBFI110 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI111 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI112 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
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