收藏本站
参数资料
型号： S29WS128N0LBFI011
厂商： Spansion Inc.
英文描述： 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
中文描述： 256/128/64兆位的CMOS 1.8伏只有同时读/写突发模式闪存
文件页数： 66/99页
文件大小： 1091K
代理商： S29WS128N0LBFI011
January 25, 2005 S29WS-N_00_G0
67
Ad vance
Information
11.7
DC Characteristics (CMOS Compatible)
Notes:
1. Maximum ICC specifications are tested with VCC = VCCmax.
2. VCC= VIO.
3. CE# must be set high when measuring the RDY pin.
4. The ICC current listed is typically less than 3 mA/MHz, with OE# at VIH.
5. ICC active while Embedded Erase or Embedded Program is in progress.
6. Device enters automatic sleep mode when addresses are stable for tACC + 20 ns.
Typical sleep mode current is equal to ICC3.
7. VIH = VCC ± 0.2 V and VIL > –0.1 V.
8. Total current during accelerated programming is the sum of VACC and VCC
currents.
9. VACC = VHH on ACC input.
10.The content in this document is Advance information for the S29WS064N and
S29WS128N. Content in this document is Preliminary for the S29W256N.
Parameter
Description (Notes)
Test Conditions (Notes 1, 2, 9)
Min
Typ
Max
Unit
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCCmax
±1
A
ILO
Output Leakage Current (3)
VOUT = VSS to VCC, VCC = VCCmax
±1
A
ICCB
VCC Active burst Read Current
CE# = VIL, OE# = VIH, WE#
= VIH, burst length = 8
54 MHz
27
54
mA
66 MHz
28
60
mA
80 MHz
30
66
mA
CE# = VIL, OE# = VIH, WE#
= VIH, burst length = 16
54 MHz
28
48
mA
66 MHz
30
54
mA
80 MHz
32
60
mA
CE# = VIL, OE# = VIH, WE#
= VIH, burst length = 32
54 MHz
29
42
mA
66 MHz
32
48
mA
80 MHz
34
54
mA
CE# = VIL, OE# = VIH, WE#
= VIH, burst length =
Continuous
54 MHz
32
36
mA
66 MHz
35
42
mA
80 MHz
38
48
mA
IIO1
VIO Non-active Output
OE# = VIH
20
30
A
ICC1
VCC Active Asynchronous
Read Current (4)
CE# = VIL, OE# = VIH, WE#
= VIH
10 MHz
27
36
mA
5 MHz
13
18
mA
1 MHz
3
4
mA
ICC2
VCC Active Write Current (5)
CE# = VIL, OE# = VIH, ACC
= VIH
VACC
15
A
VCC
19
52.5
mA
ICC3
VCC Standby Current (6, 7)
CE# = RESET# =
VCC ± 0.2 V
VACC
15
A
VCC
20
40
A
ICC4
VCC Reset Current (7)
RESET# = VIL, CLK = VIL
70
150
A
ICC5
VCC Active Current
(Read While Write) (7)
CE# = VIL, OE# = VIH, ACC = VIH @
5 MHz
50
60
mA
ICC6
VCC Sleep Current (7)
CE# = VIL, OE# = VIH
240
A
IACC
Accelerated Program Current (8)
CE# = VIL, OE# = VIH,
VACC = 9.5 V
VACC
620
mA
VCC
14
20
mA
VIL
Input Low Voltage
VIO = 1.8 V
–0.5
0.4
V
VIH
Input High Voltage
VIO = 1.8 V
VIO – 0.4
VIO + 0.4
V
VOL
Output Low Voltage
IOL = 100 A, VCC = VCC min = VIO
0.1
V
VOH
Output High Voltage
IOH = –100 A, VCC = VCC min = VIO
VIO – 0.1
V
VHH
Voltage for Accelerated Program
8.5
9.5
V
VLKO
Low VCC Lock-out Voltage
1.0
1.4
V
相关PDF资料
PDF描述
S29WS128N0LBFI012 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI013 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI110 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFW010 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS256N0PBAW011 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
相关代理商/技术参数
参数描述
S29WS128N0LBFI012 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI013 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
S29WS128N0LBFI110 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI111 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
S29WS128N0LBFI112 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*