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参数资料
| 型号： | S29WS256N0PBAW010 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| 中文描述： | 16M X 16 FLASH 1.8V PROM, 70 ns, PBGA84 |
| 封装： | 11.60 X 8 MM, LEAD FREE, PLASTIC, FBGA-84 |
| 文件页数： | 4/95页 |
| 文件大小： | 1745K |
| 代理商： | S29WS256N0PBAW010 |
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12
S29WSxxxN MirrorBit Flash Family
S29WSxxxN_00_F0 October 29, 2004
Pr e l i m i n a r y
TLC080—80-ball Fine-Pitch Ball Grid Array, 7 x 9 mm
Note: BSC is an ANSI standard for Basic Space Centering
Figure 4.4. TLC080—80-ball Fine-Pitch Ball Grid Array (FBGA) 7 x 9 mm MCP Compatible Package
3430 \ 16-038.22 \ 10.15.04
PACKAGE
TLC 080
JEDEC
N/A
D x E
9.00 mm x 7.00 mm
PACKAGE
SYMBOL
MIN
NOM
MAX
NOTE
A
---
1.20
PROFILE
A1
0.17
---
BALL HEIGHT
A2
0.81
---
0.97
BODY THICKNESS
D
9.00 BSC.
BODY SIZE
E
7.00 BSC.
BODY SIZE
D1
7.20 BSC.
MATRIX FOOTPRINT
E1
5.60 BSC.
MATRIX FOOTPRINT
MD
10
MATRIX SIZE D DIRECTION
ME
8
MATRIX SIZE E DIRECTION
n
80
BALL COUNT
φb
0.35
0.40
0.45
BALL DIAMETER
eE
0.80 BSC.
BALL PITCH
eD
0.80 BSC
BALL PITCH
SD / SE
0.40 BSC.
SOLDER BALL PLACEMENT
DEPOPULATED SOLDER BALLS
NOTES:
1.
DIMENSIONING AND TOLERANCING METHODS PER
ASME Y14.5M-1994.
2.
ALL DIMENSIONS ARE IN MILLIMETERS.
3.
BALL POSITION DESIGNATION PER JESD 95-1, SPP-010.
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
5.
SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D"
DIRECTION.
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE
"E" DIRECTION.
n IS THE NUMBER OF POPULTED SOLDER BALL POSITIONS
FOR MATRIX SIZE MD X ME.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A
AND B AND DEFINE THE POSITION OF THE CENTER SOLDER
BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE
OUTER ROW SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE
OUTER ROW, SD OR SE = e/2
8.
"+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
9.
N/A
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
C
0.08
0.20 C
A
E
B
C
0.15
(2X)
C
D
C
0.15
(2X)
INDEX MARK
6
b
TOP VIEW
SIDE VIEW
CORNER
80X
A1
A2
A
0.15
M C
MC
AB
0.08
PIN A1
J
K
E1
7
SE
A
D1
eD
DC
E
F
G
H
8
7
6
4
3
2
1
eE
5
B
PIN A1
CORNER
7
SD
BOTTOM VIEW
10
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相关代理商/技术参数 |
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| S29WS256N0PBAW011 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS256N0PBAW012 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| S29WS256N0PBAW013 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| S29WS256N0PBAW110 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS256N0PBAW111 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
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