参数资料
型号: S29WS256N0PBAW010
厂商: SPANSION LLC
元件分类: PROM
英文描述: 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
中文描述: 16M X 16 FLASH 1.8V PROM, 70 ns, PBGA84
封装: 11.60 X 8 MM, LEAD FREE, PLASTIC, FBGA-84
文件页数: 5/95页
文件大小: 1745K
代理商: S29WS256N0PBAW010
October 29, 2004 S29WSxxxN_00_F0
S29WSxxxN MirrorBit Flash Family
13
Pre l i m i n a r y
4.3 MCP Look-ahead Connection Diagram
Figure 4.5 shows a migration path from the S29WSxxxN to higher densities and the option to
include additional die within a single package. Spansion LLC provides this standard look-
ahead connection diagram that supports
NOR Flash and SRAM densities up to 4 Gigabits
NOR Flash and pSRAM densities up to 4 Gigabits
NOR Flash and pSRAM and data storage densities up to 4 Gigabits
The following multi-chip package (MCP) data sheet(s) are based on the S29WSxxxN. Refer to
these documents for input/output descriptions for each product:
Publication Number S71WS256_512NC0.
The physical package outline may vary between connection diagrams and densities. The con-
nection diagram for any MCP, however, will be a subset of the pinout in Figure 4.5.
In some cases, outrigger balls may exist in locations outside the grid shown. These outrigger
balls are reserved; do not connect them to any other signal.
For further information about the MCP look-ahead pinout, refer to the Design-In Scalable
Wireless Solutions with Spansion Products application note, available on the web or through
an AMD or Fujitsu sales office.
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