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参数资料
| 型号： | S80C188EB-13 |
| 厂商： | INTEL CORP |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 16-BIT, 13 MHz, MICROPROCESSOR, PQFP80 |
| 封装： | EIAJ, QFP-80 |
| 文件页数： | 20/59页 |
| 文件大小： | 1928K |
| 代理商： | S80C188EB-13 |
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80C186EB80C188EB 80L186EB80L188EB
ICC VERSUS FREQUENCY AND VOLTAGE
The current (ICC) consumption of the processor is
essentially composed of two components IPD and
ICCS
IPD is the quiescent current that represents internal
device leakage and is measured with all inputs or
floating outputs at GND or VCC (no clock applied to
the device) IPD is equal to the Powerdown current
and is typically less than 50 mA
ICCS is the switching current used to charge and
discharge parasitic device capacitance when chang-
ing logic levels Since ICCS is typically much greater
than IPD IPD can often be ignored when calculating
ICC
ICCS is related to the voltage and frequency at which
the device is operating It is given by the formula
Power e V c I e V2 c CDEV c f
I e ICC e ICCS e V c CDEV c f
Where V e Device operating voltage (VCC)
CDEV e Device capacitance
f e Device operating frequency
ICCS e ICC e Device current
Measuring CDEV on a device like the 80C186EB
would be difficult Instead CDEV is calculated using
the above formula by measuring ICC at a known VCC
and frequency (see Table 11) Using this CDEV val-
ue ICC can be calculated at any voltage and fre-
quency within the specified operating range
EXAMPLE Calculate the typical ICC when operating
at 10 MHz 48V
ICC e ICCS e 48 c 0583 c 10
28 mA
PDTMR PIN DELAY CALCULATION
The PDTMR pin provides a delay between the as-
sertion of NMI and the enabling of the internal
clocks when exiting Powerdown A delay is required
only when using the on-chip oscillator to allow the
crystal or resonator circuit time to stabilize
NOTE
The PDTMR pin function does not apply when
RESIN is asserted (ie a device reset during Pow-
erdown is similar to a cold reset and RESIN must
remain active until after the oscillator has stabi-
lized)
To calculate the value of capacitor required to pro-
vide a desired delay use the equation
440 c t e CPD (5V 25 C)
Where t e desired delay in seconds
CPD e capacitive load on PDTMR in mi-
crofarads
EXAMPLE To get a delay of 300 ms a capacitor
value of CPD e 440 c (300 c 10b6) e 0132 mFis
required Round up to standard (available) capaci-
tive values
NOTE
The above equation applies to delay times greater
than 10 ms and will compute the TYPICAL capaci-
tance needed to achieve the desired delay A delay
variance of a50% or b25% can occur due to
temperature
voltage
and device process ex-
tremes In general higher VCC andor lower tem-
perature will decrease delay time while lower VCC
andor higher temperature will increase delay time
Table 11 Device Capacitance (CDEV) Values
Parameter
Typ
Max
Units
Notes
CDEV (Device in Reset)
0583
102
mAV MHz
1 2
CDEV (Device in Idle)
0408
0682
mAV MHz
1 2
1 Max CDEV is calculated at b40 C all floating outputs driven to VCC or GND and all
outputs loaded to 50 pF (including CLKOUT and OSCOUT)
2 Typical CDEV is calculated at 25 C with all outputs loaded to 50 pF except CLKOUT and
OSCOUT which are not loaded
27
相关PDF资料 |
PDF描述 |
|---|---|
| S80C188EB-20 | 16-BIT, 20 MHz, MICROPROCESSOR, PQFP80 |
| SB80C188EB-20 | 16-BIT, 20 MHz, MICROPROCESSOR, PQFP80 |
| SB80C188EB-25 | 16-BIT, 25 MHz, MICROPROCESSOR, PQFP80 |
| S80L186EB-13 | 16-BIT, 13 MHz, MICROPROCESSOR, PQFP80 |
| SB80L188EB-13 | 16-BIT, 13 MHz, MICROPROCESSOR, PQFP80 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S80C188EB20 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS |
| S80C188EB25 | 功能描述:IC MPU 16-BIT 5V 25MHZ 80-MQFP RoHS:否 类别:集成电路 (IC) >> 嵌入式 - 微处理器 系列:- 标准包装:2 系列:MPC8xx 处理器类型:32-位 MPC8xx PowerQUICC 特点:- 速度:133MHz 电压:3.3V 安装类型:表面贴装 封装/外壳:357-BBGA 供应商设备封装:357-PBGA（25x25） 包装:托盘 |
| S80C188EB-25 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:16-Bit Microprocessor |
| S80C188EC13 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS |
| S80C188EC-13 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:16-Bit Microprocessor |
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