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参数资料
| 型号： | SDP8406-004 |
| 元件分类： | 光敏三极管 |
| 英文描述： | PHOTO TRANSISTOR DETECTOR |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 2/4页 |
| 文件大小： | 458K |
| 代理商： | SDP8406-004 |
Silicon Phototransistor
SDP8406
ELECTRICAL CHARACTERISTICS
UNITS
TEST CONDITIONS
MIN
PARAMETER
SYMBOL
TYP
MAX
ABSOLUTE MAXIMUM RATINGS
(25C Free-Air Temperature unless otherwise noted)
Collector-Emitter Voltage
30 V
Emitter-Collector Voltage
5 V
Power Dissipation
100 mW []
Operating Temperature Range
-40C to 85C
Storage Temperature Range
-40C to 85C
Soldering Temperature (5 sec)
240C
Notes
1. Derate linearly from 25C free-air temperature at the rate of
0.78 mW/C.
SCHEMATIC
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
121
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SDP8406-139 | 功能描述:光电晶体管 INFRARED SENSORS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| SDP8406-3 | 制造商:Honeywell Sensing and Control 功能描述:PHOTOTRANSISTOR SIDE VIEW 制造商:Honeywell Sensing and Control 功能描述:PHOTOTRANSISTOR, SIDE VIEW 制造商:Honeywell Sensing and Control 功能描述:PHOTOTRANSISTOR, SIDE VIEW; Transistor Polarity:NPN; Power Consumption:100mW; Viewing Angle:50; No. of Pins:2 ;RoHS Compliant: Yes |
| SDP8406-3 | 制造商:Honeywell Sensing and Control 功能描述:PHOTOTRANSISTOR SIDE VIEW |
| SDP8407-001 | 功能描述:光电晶体管 Silicon Phototransis RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| SDP8425-001 | 功能描述:光电晶体管 Infrared Sensors RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
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