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参数资料
| 型号： | SFC05-4.TM |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 300 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, MO-211BB |
| 封装： | FLIP CHIP, CSP-6 |
| 文件页数： | 3/8页 |
| 文件大小： | 190K |
| 代理商： | SFC05-4.TM |
3
2003 Semtech Corp.
www.semtech.com
PRELIMINARY
PROTECTION PRODUCTS
SFC05-4
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
Power Derating Curve
0
10
20
30
40
50
60
70
80
90
100
110
0
25
50
75
100
125
150
Ambient Temperature - TA (
oC)
%
of
Rated
Power
or
I
PP
Clamping Voltage vs. Peak Pulse Current
0
10
20
30
40
50
60
70
80
90
100
110
0
5
10
15
20
25
30
Time (s)
P
e
rcen
to
f
I PP
e
-t
td = IPP/2
Waveform
Parameters:
tr = 8s
td = 20s
Pulse Waveform
0.01
0.1
1
10
0.1
1
10
100
1000
Pulse Duration - tp (s)
P
eak
P
u
lse
P
o
w
e
r-
P
pk
(k
W
)
0.00
1.00
2.00
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
0
5
10
15
20
25
30
Peak Pulse Current - IPP (A)
Cl
am
p
in
g
V
o
lt
ag
e
-
V
C
(V
)
Waveform
Parameters:
tr = 8s
td = 20s
Forward Voltage vs. Forward Current
Capacitance vs. Reverse Voltage
0
1
2
3
4
0
1020
304050
Forward Current - IF (A)
For
wa
rd
V
o
lt
a
g
e
-
V
F
(V
)
Waveform
Parameters:
tr = 8s
td = 20s
0
50
100
150
200
250
300
01
23
45
Reverse Voltage - VR (V)
C
a
pa
c
it
a
nc
e
-
C
j(
pF)
f = 1MHz
相关PDF资料 |
PDF描述 |
|---|---|
| SFC05-4.WFT | 300 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, MO-211BB |
| SFC05-4.WMT | 300 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, MO-211BB |
| SFC05-5-T710-2 | 250 W, UNIDIRECTIONAL, 5 ELEMENT, SILICON, TVS DIODE |
| SFC05-5.WMT | 200 W, UNIDIRECTIONAL, 5 ELEMENT, SILICON, TVS DIODE, MO-211BB |
| SFF1605G | 16 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SFC05-5 | 制造商:PROTEC 制造商全称:Protek Devices 功能描述:FLIP CHIP ARRAY |
| SFC05-5.TC | 制造商:Semtech Corporation 功能描述:CHIPCLAMP FLIP CHIP TVS DIODE ARRAY |
| SFC05-5.WCT | 制造商:Semtech Corporation 功能描述:Diode |
| SFC05-5_07 | 制造商:PROTEC 制造商全称:Protek Devices 功能描述:FLIP CHIP ARRAY |
| SFC05-5_10 | 制造商:PROTEC 制造商全称:Protek Devices 功能描述:250w flip chip tvs array |
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