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参数资料
| 型号： | SGH23N60UFD |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Ultra-Fast IGBT |
| 中文描述： | 23 A, 600 V, N-CHANNEL IGBT |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 627K |
| 代理商： | SGH23N60UFD |
2000 Fairchild Semiconductor International
SGH23N60UFD Rev. A
S
G
H23N60UFD
Electrical Characteristics of IGBT T
C = 25°C unless otherwise noted
Electrical Characteristics of DIODE T
C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250uA
600
--
V
B
VCES/
T
J
Temperature Coeff. of Breakdown
Voltage
VGE = 0V, IC = 1mA
--
0.6
--
V/
°C
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
--
250
uA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
--
± 100
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 12mA, VCE = VGE
3.5
4.5
6.5
V
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 12A,
VGE = 15V
--
2.1
2.6
V
IC = 23A,
VGE = 15V
--
2.6
--
V
Dynamic Characteristics
Cies
Input Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
--
720
--
pF
Coes
Output Capacitance
--
100
--
pF
Cres
Reverse Transfer Capacitance
--
25
--
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VCC = 300 V, IC = 12A,
RG = 23, VGE = 15V,
Inductive Load, TC = 25°C
--
17
--
ns
tr
Rise Time
--
27
--
ns
td(off)
Turn-Off Delay Time
--
60
130
ns
tf
Fall Time
--
70
150
ns
Eon
Turn-On Switching Loss
--
115
--
uJ
Eoff
Turn-Off Switching Loss
--
135
--
uJ
Ets
Total Switching Loss
--
250
400
uJ
td(on)
Turn-On Delay Time
VCC = 300 V, IC = 12A,
RG = 23, VGE = 15V,
Inductive Load, TC = 125°C
--
23
--
ns
tr
Rise Time
--
32
--
ns
td(off)
Turn-Off Delay Time
--
100
200
ns
tf
Fall Time
--
220
250
ns
Eon
Turn-On Switching Loss
--
205
--
uJ
Eoff
Turn-Off Switching Loss
--
320
--
uJ
Ets
Total Switching Loss
--
525
800
uJ
Qg
Total Gate Charge
VCE = 300 V, IC = 12A,
VGE = 15V
--
49
80
nC
Qge
Gate-Emitter Charge
--
11
17
nC
Qgc
Gate-Collector Charge
--
14
22
nC
Le
Internal Emitter Inductance
Measured 5mm from PKG
--
14
--
nH
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VFM
Diode Forward Voltage
IF = 12A
TC = 25°C
--
1.4
1.7
V
TC = 100°C
--
1.3
--
trr
Diode Reverse Recovery Time
IF = 12A,
di/dt = 200A/us
TC = 25°C
--
42
60
ns
TC = 100°C
--
80
--
Irr
Diode Peak Reverse Recovery
Current
TC = 25°C
--
3.5
6.0
A
TC = 100°C
--
5.6
--
Qrr
Diode Reverse Recovery Charge
TC = 25°C
--
80
180
nC
TC = 100°C
--
220
--
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相关代理商/技术参数 |
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| SGH25N120RUF | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Short Circuit Rated IGBT |
| SGH25N120RUFTU | 功能描述:IGBT 晶体管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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