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参数资料
| 型号： | SGH80N60UFTU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | IGBT HI PERFORM 00V 40A TO-3P |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Product Discontinuation 27/Feb/2012 |
| 标准包装： | 30 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.6V @ 15V，40A |
| 电流 - 集电极 (Ic)（最大）： | 80A |
| 功率 - 最大： | 195W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-3P-3，SC-65-3 |
| 供应商设备封装： | TO-3PN |
| 包装： | 管件 |
IGBT
SGH80N60UF
Ultra-Fast IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
Features
? High speed switching
? Low saturation voltage : V CE(sat) = 2.1 V @ I C = 40A
? High input impedance
control and general inverters where high speed switching is
a required feature.
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
G C E
TO-3P N
E
Absolute Maximum Ratings
T C = 25 ° C unless otherwise noted
Symbol
Description
SGH80N60UF
Units
V CES
V GES
I C
I CM (1)
I F
I FM
P D
T J
T stg
T L
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T C = 25 ° C
@ T C = 100 ° C
@ T C = 100 ° C
@ T C = 25 ° C
@ T C = 100 ° C
600
± 20
80
40
220
25
280
195
78
-55 to +150
-55 to +150
300
V
V
A
A
A
A
A
W
W
° C
° C
° C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
Max.
0.64
40
Units
° C / W
° C / W
?2002 Fairchild Semiconductor Corporation
SGH80N60UF Rev. A1
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