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参数资料
| 型号： | SGL160N60UFDTU |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | IGBT ULTRA FAST 600V 160A TO264 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | FGL, SGL TO-264 Pkg |
| 标准包装： | 25 |
| 电压 - 集电极发射极击穿（最大）： | 600V |
| Vge, Ic时的最大Vce（开）： | 2.6V @ 15V，80A |
| 电流 - 集电极 (Ic)（最大）： | 160A |
| 功率 - 最大： | 250W |
| 输入类型： | 标准 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-264-3，TO-264AA |
| 供应商设备封装： | TO-264 |
| 包装： | 管件 |
| 产品目录页面： | 1610 (CN2011-ZH PDF) |
IGBT
SGL160N60UFD
Ultrafast IGBT
General Description
Features
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
?
?
?
?
High speed switching
Low saturation voltage : V CE (sat) = 2.1 V @ I C = 80A
High input impedance
CO-PAK, IGBT with FRD: t rr = 75nS (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, servo controls, and power supplies.
C
G
G
C
E
TO-264
E
Absolute Maximum Ratings
T C = 25 ° C unless otherwise noted
Symbol
Description
SGL160N60UFD
Units
V CES
V GES
I C
I CM (1)
I F
I FM
P D
T J
T stg
T L
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T C = 25 ° C
@ T C = 100 ° C
@ T C =100 ° C
@ T C = 25 ° C
@ T C = 100 ° C
600
± 20
160
80
300
25
280
250
100
-55 to +150
-55 to +150
300
V
V
A
A
A
A
A
W
W
° C
° C
° C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R θ JC (IGBT)
R θ JC (DIODE)
R θ JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.5
0.83
25
Units
° C / W
° C / W
° C / W
?2002 Fairchild Semiconductor Corporation
SGL160N60UFD Rev. B1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SGL160N60UFDTU | 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT ULTRAFAST 600V 160A TO-264 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT, ULTRAFAST, 600V, 160A, TO-264 |
| SGL160N60UFDTU | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR TYPE:IGBT |
| SGL160N60UFTU | 功能描述:IGBT 晶体管 600V/80A/2.0V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| SGL-17 | 制造商:Pma ag 功能描述:Bulk |
| SGL1-90 | 制造商:SEMIKRON 制造商全称:Semikron International 功能描述:Schottky barrier rectifiers diodes |
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