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参数资料
| 型号： | SI1469DH-T1-GE3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 9/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V SC-70-6 |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 80 毫欧 @ 2A，10V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 470pF @ 10V |
| 功率 - 最大： | 2.78W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-70-6 |
| 包装： | 标准包装 |
| 其它名称： | SI1469DH-T1-GE3DKR |
AN815
Vishay Siliconix
Front of Board SC70-6
Back of Board SC70-6
vishay.com
FIGURE 3.
THERMAL PERFORMANCE
R q JA
P D + 150 C o * 25 C
R q JA
P D + 150 C o * 60 C
Junction-to-Foot Thermal Resistance
(Package Performance)
The junction to foot thermal resistance is a useful method of
comparing different packages thermal performance.
A helpful way of presenting the thermal performance of the
6-Pin SC-70 copper leadframe device is to compare it to the
traditional Alloy 42 version.
COOPER LEADFRAM E
Room Ambient 25 _ C
T J(max) * T A
P D +
o o
124 C W
P D + 1.01 W
Elevated Ambient 60 _ C
T J(max) * T A
P D +
o o
124 C W
P D + 726 mW
R q JA
R q JA
P D + 150 C o * 25 C
P D + 150 C o * 25 C
329.7 _ C/W
208.5 _ C/W
2) Industry standard 1-inch 2 PCB with
211.8 _ C/W 103.5 _ C/W
Thermal performance for the 6-pin SC-70 measured as
junction-to-foot thermal resistance, where the “foot” is the
drain lead of the device at the bottom where it meets the PCB.
The junction-to-foot thermal resistance is typically 40 _ C/W in
the copper leadframe and 163 _ C/W in the Alloy 42 leadframe
— a four-fold improvement. This improved performance is
obtained by the enhanced thermal conductivity of copper over
Alloy 42.
Power Dissipation
The typical R q JA for the single 6-pin SC-70 with copper
leadframe is 103 _ C/W steady-state, compared with 212 _ C/W
for the Alloy 42 version. The figures are based on the 1-inch 2
FR4 test board. The following example shows how the thermal
resistance impacts power dissipation for the two different
leadframes at varying ambient temperatures.
ALLOY 42 LEADFRAME
Room Ambient 25 _ C Elevated Ambient 60 _ C
T J(max) * T A T J(max) * T A
P D + P D +
o o o o
212 C W 212 C W
P D + 590 mW P D + 425 mW
www.vishay.com
2
As can be seen from the calculations above, the compact 6-pin
SC-70 copper leadframe LITTLE FOOT power MOSFET can
handle up to 1 W under the stated conditions.
Testing
To further aid comparison of copper and Alloy 42 leadframes,
Figure 5 illustrates single-channel 6-pin SC-70 thermal
performance on two different board sizes and two different pad
patterns. The measured steady-state values of R q JA for the
two leadframes are as follows:
LITTLE FOOT 6-PIN SC-7 0
Alloy 42 Copper
1) Minimum recommended pad pattern on
the EVB board V (see Figure 3.
maximum copper both sides.
The results indicate that designers can reduce thermal
resistance (R q JA ) by 36% simply by using the copper
leadframe device rather than the Alloy 42 version. In this
example, a 121 _ C/W reduction was achieved without an
increase in board area. If increasing in board size is feasible,
a further 105 _ C/W reduction could be obtained by utilizing a
1-inch 2 square PCB area.
The copper leadframe versions have the following suffix:
Single: Si14xxEDH
Dual: Si19xxEDH
Complementary: Si15xxEDH
Document Number: 71334
12-Dec-03
相关PDF资料 |
PDF描述 |
|---|---|
| SI1470DH-T1-GE3 | MOSFET N-CH 30V SC-70-6 |
| SI1471DH-T1-GE3 | MOSFET P-CH 30V SC-70-6 |
| SI1557DH-T1-E3 | MOSFET N/P-CH 12V SC70-6 |
| SI1563EDH-T1-GE3 | MOSFET N/P-CH 20V SC70-6 |
| SI1900DL-T1-E3 | MOSFET N-CH DUAL 30V SC70-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SI1470DH | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
| SI1470DH_10 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
| SI1470DH-T1-E3 | 功能描述:MOSFET 30V 4.0A 2.8W 66mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI1470DH-T1-GE3 | 功能描述:MOSFET 30V 4.0A 2.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SI1470EDH-T1-E3 | 制造商:Vishay Siliconix 功能描述:N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel |
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